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參數(shù)資料
| 型號(hào)： | BUT211 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大?。?/td> | 70K |
| 代理商： | BUT211 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT211
Fig.13. Typical DC current gain. h
FE
= f(I
C
)
parameter V
CE
Fig.14. Forward bias safe operating area. T
mb
= 25C
I
II
NB:
Region of permissible DC operation.
Extension for repetitive pulse operation.
Mounted with heatsink compound and
30
±
5 newton force on the centre of the
envelope.
Fig.15. Reverse bias safe operating area. T
j
≤
T
j max
Fig.16. Test circuit RBSOA. V
= 150 V; -V
BB
= 5 V
L
C
= 200
μ
H; V
CL
≤
850 V; L
B
= 1
μ
H
0.01
1
100
10
1
0.1
10
h
FE
IC / A
Tj = 25 C
Tj = 125 C
1V
5V
0
200
400
600
800
1000
6
5
4
3
2
1
0
IC / A
VCE / V
100
10
1
0.1
0.01
1
10
100
1000
IC / A
VCE / V
tp =
10 us
100 us
500 us
2 ms
10 ms
DC
ICMmax
ICmax
I
II
= 0.01
LB
IBon
-VBB
LC
T.U.T.
VCC
VCL
March 1996
5
Rev 1.100
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| BUT211X | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistor |
| BUT22B | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistors |
| BUT22BF | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistors |
| BUT22C | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistors |
| BUT22CF | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistors |
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