參數(shù)資料
型號(hào): BUT211
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 功率晶體管
英文描述: Silicon Diffused Power Transistor
中文描述: 5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: PLASTIC, TO-220AB, 3 PIN
文件頁(yè)數(shù): 6/7頁(yè)
文件大?。?/td> 70K
代理商: BUT211
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT211
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.17. TO220AB; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x)
1 2 3
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
2,54 2,54
0,9 max (3x)
13,5
min
March 1996
6
Rev 1.100
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