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參數(shù)資料
| 型號： | BUT211 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 70K |
| 代理商： | BUT211 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT211
Fig.7. Normalised power dissipation.
PD% = 100
PD/PD
25C
= f (T
mb
)
Fig.8. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.9. Typical base-emitter saturation voltage.
V
BEsat
= f(I
C
); parameter I
C
/I
B
Fig.10. Typical collector-emitter saturation voltage.
V
CEsat
= f(I
C
); parameter I
C
/I
B
Fig.11. Typical base-emitter saturation voltage.
V
BEsat
= f(I
B
); parameter I
C
Fig.12. Typical collector-emitter saturation voltage.
V
CEsat
= f(I
B
); parameter I
C
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0.1
1
10
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
VCEsat / V
IC / A
Tj = 25 C
Tj = 125 C
IC/IB=
12
10
8
1E-06
1E-04
1E-02
t / s
1E+00
Zth / (K/W)
10
1
0.1
0.01
0
0.5
0.2
0.1
0.05
D =
tp
T
T
P
D
t
t
p
D=
0
0.4
0.8
1.2
IB / A
1.6
2
2.4
1.2
1.1
1
0.9
0.8
0.7
0.6
VBEsat / V
Tj = 25 C
Tj = 125 C
IC =
5A
3A
2A
0.1
1
10
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
VBEsat / V
IC / A
Tj = 125 C
Tj = 25 C
IC/IB=
8
10
12
0.1
1
10
10
1
0.1
VCEsat / V
IB / A
Tj = 25 C
Tj = 125 C
IC=2A
3A
5A
March 1996
4
Rev 1.100
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| BUT211X | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistor |
| BUT22B | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistors |
| BUT22BF | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistors |
| BUT22C | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistors |
| BUT22CF | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistors |
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