- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄170346 > CY7C1031-8NC (CYPRESS SEMICONDUCTOR CORP) 64K X 18 CACHE SRAM, 8.5 ns, PQFP52 PDF資料下載
參數(shù)資料
| 型號(hào)： | CY7C1031-8NC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | SRAM |
| 英文描述： | 64K X 18 CACHE SRAM, 8.5 ns, PQFP52 |
| 封裝： | PLASTIC, QFP-52 |
| 文件頁數(shù)： | 7/14頁 |
| 文件大小： | 343K |
| 代理商： | CY7C1031-8NC |
CY7C1031
CY7C1032
PRELIMINARY
2
Functional Description (continued)
Single Write Accesses Initiated by ADSP
This access is initiated when the following conditions are sat-
isfied at clock rise: (1) CS is LOW and (2) ADSP is LOW. AD-
SP-triggered write cycles are completed in two clock periods.
The address at A0 through A15 is loaded into the address reg-
ister and address advancement logic and delivered to the
RAM core. The write signal is ignored in this cycle because the
cache tag or other external logic uses this clock period to per-
form address comparisons or protection checks. If the write is
allowed to proceed, the write input to the CY7C1031 and
CY7C1032 will be pulled LOW before the next clock rise.
ADSP is ignored if CS is HIGH.
If WH, WL, or both are LOW at the next clock rise, information pre-
sented at DQ0 – DQ15 and DP0 – DP1 will be written into the location
specified by the address advancement logic. WL controls the writing
of DQ0 – DQ7 and DP0 while WH controls the writing of DQ8 – DQ15
and DP1. Because the CY7C1031 and CY7C1032 are common-I/O
devices, the output enable signal (OE) must be deasserted before
data from the CPU is delivered to DQ0 – DQ15 and DP0 – DP1. As a
safety precaution, the appropriate data lines are three-stated in the
cycle where WH, WL, or both are sampled LOW, regardless of the
state of the OE input.
Single Write Accesses Initiated by ADSC
This write access is initiated when the following conditions are
satisfied at rising edge of the clock: (1) CS is LOW, (2) ADSC is
LOW, and (3) WH or WL are LOW. ADSC triggered accesses are
completed in a single clock cycle.
The address at A0 through A15 is loaded into the address reg-
ister and address advancement logic and delivered to the
RAM core. Information presented at DQ0 – DQ15 and DP0 –
DP1 will be written into the location specified by the address
advancement logic. Since the CY7C1031 and the CY7C1032
are common-I/O devices, the output enable signal (OE) must
be deasserted before data from the cache controller is deliv-
ered to the data and parity lines. As a safety precaution, the
appropriate data and parity lines are three-stated in the cycle
where WH and WL are sampled LOW regardless of the state
of the OE input.
Single Read Accesses
A single read access is initiated when the following conditions
are satisfied at clock rise: (1) CS is LOW, (2) ADSP or ADSC
is LOW, and (3) WH and WL are HIGH. The address at A0
through A15 is stored into the address advancement logic
and delivered to the RAM core. If the output enable (OE)
signal is asserted (LOW), data will be available at the data
outputs a maximum of 8.5 ns after clock rise.
ADSP is
ignored if CS is HIGH.
Burst Sequences
The CY7C1031 provides a 2-bit wraparound counter, fed by
pins A0 – A1, that implements the Intel 80486 and Pentium proces-
sor’s address burst sequence (see
Table 1). Note that the burst se-
quence depends on the first burst address.
The CY7C1032 provides a two-bit wraparound counter, fed by
pins A0 – A1, that implements a linear address burst sequence (see
Table 2).
Application Example
Figure 1 shows a 512-Kbyte secondary cache for the Pentium
microprocessor using four CY7C1031 cache RAMs.
Table 1. Counter Implementation for the Intel
Pentium/80486 Processor’s Sequence
First
Address
Second
Address
Third
Address
Fourth
Address
AX + 1, Ax
00
01
10
11
01
00
11
10
11
00
01
11
10
01
00
Table 2. Counter Implementation for a Linear Sequence
First
Address
Second
Address
Third
Address
Fourth
Address
AX + 1, Ax
00
01
10
11
01
10
11
00
10
11
00
01
11
00
01
10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C106L-15VC | 256K X 4 STANDARD SRAM, 15 ns, PDSO28 |
| CY7C1350-133ACT | 128K X 36 ZBT SRAM, 4.2 ns, PQFP100 |
| CY7C1425BV18-200BZXC | 4M X 9 QDR SRAM, 0.45 ns, PBGA165 |
| CY7C1442AV25-200BZC | 2M X 18 CACHE SRAM, 3.2 ns, PBGA165 |
| CY7C1561KV18-500BZI | 8M X 8 QDR SRAM, 0.33 ns, PBGA165 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1032-10JC | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Single 5V 1.125M-Bit 64K x 18 10ns 52-Pin PLCC 制造商:Rochester Electronics LLC 功能描述:1MB (64KX18) SYNCH RAM POWER PC BURST - Bulk |
| CY7C1032-10JCT | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Single 5V 1.125M-Bit 64K x 18 10ns 52-Pin PLCC T/R |
| CY7C1032-12JC | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| CY7C10328JC | 制造商:CYPRESS 功能描述:NEW |
| CY7C1032-8JC | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Single 5V 1.125M-Bit 64K x 18 8.5ns 52-Pin PLCC |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。