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參數(shù)資料
| 型號： | CY7C1425BV18-200BZXC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | SRAM |
| 英文描述： | 4M X 9 QDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 |
| 文件頁數(shù)： | 1/28頁 |
| 文件大?。?/td> | 666K |
| 代理商： | CY7C1425BV18-200BZXC |
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36-Mbit QDR-II SRAM 2-Word
Burst Architecture
CY7C1410BV18, CY7C1425BV18
CY7C1412BV18, CY7C1414BV18
Cypress Semiconductor Corporation
198 Champion Court
San Jose
, CA 95134-1709
408-943-2600
Document #: 001-07036 Rev. *D
Revised June 16, 2008
Features
■ Separate independent read and write data ports
Supports concurrent transactions
■ 250 MHz clock for high bandwidth
■ 2-word burst on all accesses
■ Double Data Rate (DDR) interfaces on both read and write ports
(data transferred at 500 MHz) at 250 MHz
■ Two input clocks (K and K) for precise DDR timing
SRAM uses rising edges only
■ Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches
■ Echo clocks (CQ and CQ) simplify data capture in high-speed
systems
■ Single multiplexed address input bus latches address inputs
for both read and write ports
■ Separate port selects for depth expansion
■ Synchronous internally self-timed writes
■ QDR-II operates with 1.5 cycle read latency when Delay Lock
Loop (DLL) is enabled
■ Operates as a QDR-I device with 1 cycle read latency in DLL
off mode
■ Available in x 8, x 9, x 18, and x 36 configurations
■ Full data coherency, providing most current data
■ Core VDD = 1.8V (±0.1V); IO VDDQ = 1.4V to VDD
■ Available in 165-Ball FBGA package (15 x 17 x 1.4 mm)
■ Offered in both Pb-free and non Pb-free packages
■ Variable drive HSTL output buffers
■ JTAG 1149.1 compatible test access port
■ Delay Lock Loop (DLL) for accurate data placement
Configurations
CY7C1410BV18 – 4M x 8
CY7C1425BV18 – 4M x 9
CY7C1412BV18 – 2M x 18
CY7C1414BV18 – 1M x 36
Functional Description
The CY7C1410BV18, CY7C1425BV18, CY7C1412BV18, and
CY7C1414BV18 are 1.8V Synchronous Pipelined SRAMs,
equipped with QDR-II architecture. QDR-II architecture consists
of two separate ports: the read port and the write port to access
the memory array. The read port has data outputs to support read
operations and the write port has data inputs to support write
operations. QDR-II architecture has separate data inputs and
data outputs to completely eliminate the need to “turn-around”
the data bus required with common IO devices. Access to each
port is accomplished through a common address bus. The read
address is latched on the rising edge of the K clock and the write
address is latched on the rising edge of the K clock. Accesses to
the QDR-II read and write ports are completely independent of
one another. To maximize data throughput, both read and write
ports are provided with DDR interfaces. Each address location
is associated with two 8-bit words (CY7C1410BV18), 9-bit words
(CY7C1425BV18), 18-bit words (CY7C1412BV18), or 36-bit
words (CY7C1414BV18) that burst sequentially into or out of the
device. Because data can be transferred into and out of the
device on every rising edge of both input clocks (K and K and C
and C), memory bandwidth is maximized while simplifying
system design by eliminating bus “turn-arounds.”
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
Selection Guide
Description
250 MHz
200 MHz
167 MHz
Unit
Maximum Operating Frequency
250
200
167
MHz
Maximum Operating Current
x8
800
700
620
mA
x9
800
700
620
x18
850
725
650
x36
1000
850
740
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1442AV25-200BZC | 2M X 18 CACHE SRAM, 3.2 ns, PBGA165 |
| CY7C1561KV18-500BZI | 8M X 8 QDR SRAM, 0.33 ns, PBGA165 |
| CY7C172A-25VC | 4K X 4 STANDARD SRAM, 25 ns, PDSO24 |
| CY7C188-35VC | 32K X 9 STANDARD SRAM, 35 ns, PDSO32 |
| CY7C292A-25DI | 2K X 8 OTPROM, 25 ns, CDIP24 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1425JV18-250BZC | 功能描述:靜態(tài)隨機(jī)存取存儲器 4Mx9 QDR-II Burst 2 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1425JV18-250BZI | 功能描述:靜態(tài)隨機(jī)存取存儲器 4Mx9 1.8V QDR-II BURST 2 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1425JV18-250BZXC | 功能描述:靜態(tài)隨機(jī)存取存儲器 4Mx9 QDR-II Burst 2 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1425JV18-267BZI | 功能描述:靜態(tài)隨機(jī)存取存儲器 4Mx9 QDR-II Burst 2 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1425JV18-267BZIT | 功能描述:靜態(tài)隨機(jī)存取存儲器 4Mx9 QDR-II Burst 2 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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