參數(shù)資料
型號: CY7C106
廠商: Cypress Semiconductor Corp.
英文描述: 256K x 4 Static RAM(256K x 4 靜態(tài) RAM)
中文描述: 256K × 4靜態(tài)存儲器(256K × 4靜態(tài)內(nèi)存)
文件頁數(shù): 8/8頁
文件大?。?/td> 203K
代理商: CY7C106
CY7C106
CY7C1006
Cypress Semiconductor Corporation, 1998. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.
Package Diagrams
28-Lead (300-Mil) Molded SOJ V21
51-85031-B
28-Lead (400-Mil) Molded SOJ V28
51-85032-A
相關(guān)PDF資料
PDF描述
CY7C1006 256K x 4 Static RAM(256K x4 靜態(tài) RAM)
CY7C1146V18 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1150V18-333BZXC 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1150V18-333BZXI 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1150V18-375BZC 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
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