參數(shù)資料
型號(hào)： CY7C133-55JI
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 2K x 16 Dual-Port Static RAM
中文描述： 2K X 16 DUAL-PORT SRAM, 55 ns, PQCC68
封裝： PLASTIC, LCC-68
文件頁(yè)數(shù)： 5/13頁(yè)
文件大小： 506K
代理商： CY7C133-55JI
CY7C133
CY7C143
Document #: 38-06036 Rev. *B
Page 5 of 13
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature
.....................................
65
°
C to +150
°
C
Ambient Temperature with
Power Applied
..................................................
55
°
C to +125
°
C
Supply Voltage to Ground Potential
(Pin 48 to Pin 24)
.................................................
0.5V to +7.0V
DC Voltage Applied to Outputs
in High-Z State
.....................................................
0.5V to +7.0V
DC Input Voltage
.................................................
3.5V to +7.0V
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... >200 mA
Operating Range
Range
Ambient Temperature
0
°
C to +70
°
C
40
°
C to +85
°
C
V
CC
Commercial
Industrial
5V ± 10%
5V ± 10%
Electrical Characteristics
Over the Operating Range
Parameter
V
OH
V
OL
Description
Test Conditions
7C133-25
7C143-25
Typ.
Unit
V
V
Min.
2.4
Max.
Output HIGH Voltage
Output LOW Voltage
V
CC
= Min., I
OH
= –4.0 mA
I
OL
= 4.0 mA
I
OL
= 16.0 mA
[5]
0.4
0.5
V
IH
V
IL
I
IX
I
OZ
I
OS
I
CC
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
Output Short Circuit Current
[6, 7]
V
CC
Operating Supply Current
2.2
V
V
μ
A
μ
A
mA
mA
0.8
+5
+5
200
250
290
60
75
140
160
15
15
GND < V
I
< V
CC
GND < V
O
< V
CC
, Output Disabled
V
CC
= Max., V
OUT
= GND
CE = V
IL
,
Outputs Open, f = f
MAX[8]
CE
L
and CE
R
> V
IH
, f = f
MAX[8]
5
5
Com’l
Ind.
Com’l
Ind.
Com’l
Ind.
Com’l
Ind.
170
170
40
40
100
100
3
3
I
SB1
Standby Current Both Ports, TTL
Inputs
mA
I
SB2
Standby Current One Port, TTL
Inputs
CE
L
or CE
R
> V
IH
, Active Port
Outputs Open, f = f
MAX[8]
mA
I
SB3
Standby Current Both Ports,
CMOS Inputs
Both Ports CE
L
and CE
R
> V
CC
–
0.2V, V
IN
> V
CC
– 0.2V or V
IN
<
0.2V, f = 0
One Port CE
L
or CE
R
> V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V or
V
IN
< 0.2V, Active Port Outputs Open,
f = f
MAX[8]
mA
I
SB4
Standby Current One Port,
CMOS Inputs
Com’l
Ind.
90
90
120
140
mA
Electrical Characteristics
Over the Operating Range (continued)
Parameter
V
OH
V
OL
Description
Output HIGH Voltage
Output LOW Voltage
Test Conditions
7C133-35
7C143-35
Min.
Typ.
2.4
7C133-55
7C143-55
Typ.
Unit
V
V
Max.
Min.
2.4
Max.
V
CC
= Min., I
OH
= –4.0 mA
I
OL
= 4.0 mA
I
OL
= 16.0 mA
[5]
0.4
0.5
0.4
0.5
V
IH
V
IL
I
IX
Notes:
5.
6.
7.
8.
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current GND < V
I
< V
CC
2.2
2.2
V
V
μ
A
0.8
+5
0.8
+5
5
5
BUSY pin only.
Duration of the short circuit should not exceed 30 seconds.
Tested initially and after any design or process changes that may affect these parameters.
At f=f
MAX
, address and data inputs are cycling at the maximum frequency of read cycle of 1/t
RC
and using AC Test Waveforms input levels of GND to 3V.
相關(guān)PDF資料
PDF描述
CY7C143 2K x 16 Dual-Port Static RAM
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