參數(shù)資料
型號(hào)： CY7C1512V18-167BZXC
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類(lèi)： DRAM
英文描述： 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
中文描述： 4M X 18 QDR SRAM, 0.5 ns, PBGA165
封裝： 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
文件頁(yè)數(shù)： 26/27頁(yè)
文件大?。?/td> 458K
代理商： CY7C1512V18-167BZXC
CY7C1510V18
CY7C1525V18
CY7C1512V18
CY7C1514V18
Document #: 38-05489 Rev. *D
Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Page 26 of 27
Package Diagram
QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, Hitachi, IDT, NEC, and Samsung
technology. All product and company names mentioned in this document are the trademarks of their respective holders.
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165-ball FBGA (15 x 17 x 1.40 mm) (51-85195)
51-85195-*A
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相關(guān)PDF資料
PDF描述
CY7C1512V18-167BZXI 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1512V18-200BZI 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1512V18-200BZXC 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1512V18-200BZXI 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1512V18-250BZI 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1512V18-167BZXI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mx18 72M QDR II Burst 2 靜態(tài)隨機(jī)存取存儲(chǔ)器 IND RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1512V18-167BZXIES 制造商:Cypress Semiconductor 功能描述:72-MBIT QDR-II SRAM 2-WORD BURST ARCHITECTURE 制造商:Cypress Semiconductor 功能描述:4MX18 72M QDR-II BURST 2 SRAM - Bulk
CY7C1512V18-200BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mx18 72M QDR II Burst 2 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1512V18-200BZCES 制造商:Cypress Semiconductor 功能描述:72-MBIT QDR-II SRAM 2-WORD BURST ARCHITECTURE 制造商:Cypress Semiconductor 功能描述:4MX18 72M QDR-II BURST 2 SRAM - Bulk
CY7C1512V18-200BZI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mx18 72M QDR II Burst 2 靜態(tài)隨機(jī)存取存儲(chǔ)器 IND RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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