參數(shù)資料
型號(hào)： DE275-501N16
廠商： IXYS Corporation
英文描述： RF Power MOSFET
中文描述： 射頻功率MOSFET
文件頁數(shù)： 1/3頁
文件大小： 76K
代理商： DE275-501N16
DE275-501N16A
RF Power MOSFET
Directed Energy, Inc.
IXYS
Company
An
Preliminary Data Sheet
V
DSS
I
D25
R
DS(on)
P
DHS
=
=
=
=
500 V
16 A
.5
375 W
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25°C to 150°C
500
V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 M
500
V
V
GS
Continuous
±20
V
V
GSM
Transient
±30
V
I
D25
T
c
= 25°C
16
A
I
DM
T
c
= 25°C, pulse width limited by T
JM
98
A
I
AR
T
c
= 25°C
16
A
E
AR
T
c
= 25°C
20
mJ
I
S
≤
I
DM
, di/dt
≤
100A/
μ
s, V
DD
≤
V
DSS
,
T
j
≤
150°C, R
G
= 0.2
5 V/ns
I
S
= 0
>200 V/ns
P
DHS
T
c
= 25°C
Derate 3.0W/°C above 25°C
375
W
P
DAMB
T
c
= 25°C
3.0
W
T
J
-55…+150
°C
T
JM
150
°C
T
stg
-55…+150
°C
T
L
1.6mm (0.063 in) from case for 10 s
300
°C
Weight
2
g
dv/dt
R
thJHS
0.33
K/W
Symbol
Test Conditions
Characteristic Values
T
J
= 25°C unless otherwise specified
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3 ma
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 ma
2.5
5.5
V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0
±100 nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25°C
V
GS
= 0 T
J
= 125°C
50
1
μ
A
mA
R
DS(on)
.5
g
fs
V
DS
= 15 V, I
D
= 0.5I
D25
, pulse test
2
6
S
V
GS
= 15 V, I
D
= 0.5I
D25
Pulse test, t
≤
300
μ
S, duty cycle d
≤
2%
Features
Isolated Substrate
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
IXYS advanced low Q
g
process
Low gate charge and capacitances
easier to drive
faster switching
Low R
DS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Advantages
Optimized for RF and high speed
switching at frequencies to 100MHz
Easy to mount—no insulators needed
High power density
N-Channel Enhancement Mode
Avalanche Rated
Low Q
g
and R
g
High dv/dt
Nanosecond Switching
DRAIN
SG1
SG2
GATE
SD1
SD2
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DE275-501N16-00 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 16A I(D)
DE275-501N16A 制造商:IXYS Corporation 功能描述:Trans MOSFET N-CH 500V 16A 6-Pin(4+2Tab) 制造商:IXYS Corporation 功能描述:MOSFET N RF DE275 制造商:IXYS Corporation 功能描述:MOSFET, N, RF, DE275 制造商:IXYS Corporation 功能描述:RF MOSFET, N CHANNEL, 500V, DE-275; Transistor Type:RF MOSFET; Drain Source Voltage Vds:500V; Continuous Drain Current Id:16A; Power Dissipation Pd:590W; Operating Temperature Min:-55C; Operating Temperature Max:175C; No. of Pins:6;RoHS Compliant: Yes
DE275-801N06-00 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 800V V(BR)DSS | 6A I(D)
DE275X2-102N06A 制造商:IXYS Corporation 功能描述:MOSFET N RF DE275X2 制造商:IXYS Corporation 功能描述:MOSFET, N, RF, DE275X2 制造商:IXYS Corporation 功能描述:DE275X2 Series N-Channel 1000 Vds 800 mOhms 50 nC 1180 W RF Power Mosfet 制造商:IXYS Corporation 功能描述:MOSFET, N CH, RF, 16A, 1KV, 1.18KW; Transistor Type:RF MOSFET; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:16A; Power Dissipation Pd:1.18kW; Operating Temperature Min:-55C; Operating Temperature Max:175C ;RoHS Compliant: Yes
DE275X2-501N16 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:RF Power MOSFET
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