參數(shù)資料
型號(hào)： DE275-501N16
廠商： IXYS Corporation
英文描述： RF Power MOSFET
中文描述： 射頻功率MOSFET
文件頁(yè)數(shù)： 3/3頁(yè)
文件大?。?/td> 76K
代理商： DE275-501N16
DE275-501N16A
RF Power MOSFET
Directed Energy, Inc.
IXYS
Company
An
501N16A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE
level 3 MOSFET model. It includes the stray inductive terms L
G
, L
S
and L
D
. Rd is the R
DS(ON)
of
the device, Rds is the resistive leakage term. The output capacitance, C
OSS
, and reverse transfer
capacitance, C
RSS
are modeled with reversed biased diodes. This provides a varactor type re-
sponse necessary for a high power device model. The turn on delay and the turn off delay are ad-
justed via Ron and Roff.
Figure 1 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the DEI web site at
www.directedenergy.com/spice.htm
Net List:
SYM=POWMOSN
.SUBCKT 501N16A 10 20 30
* TERMINALS: D G S
* 500 Volt 16 Amp .5 ohm N-Channel Power MOSFET
* REVA 6-15-00
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 .2
DON 6 2 D1
ROF 5 7 .2
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 2.0N
RD 4 1 .5
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .5N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=5.8)
.MODEL D1 D (IS=.5F CJO=10P BV=100 M=.5 VJ=.7 TT=1N RS=10M)
.MODEL D2 D (IS=.5F CJO=450P BV=500 M=.4 VJ=.6 TT=10N RS=10M)
.MODEL D3 D (IS=.5F CJO=900P BV=500 M=.3 VJ=.3 TT=400N RS=10M)
.ENDS
5
6
7
8
4
10 DRAIN
30 SOURCE
20 GATE
Don
Dcos
D2crs
D1crs
Rds
Ron
Doff
Roff
Rd
Lg
Ld
Ls
M3
2
1
3
Directed Energy, Inc.
An
IXYS
Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: deiinfo@directedenergy.com
Web: http://www.directedenergy.com
Doc #9200-0222 Rev 1
2001 Directed Energy, Inc.
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PDF描述
DE275-501N16A RF Power MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DE275-501N16-00 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 16A I(D)
DE275-501N16A 制造商:IXYS Corporation 功能描述:Trans MOSFET N-CH 500V 16A 6-Pin(4+2Tab) 制造商:IXYS Corporation 功能描述:MOSFET N RF DE275 制造商:IXYS Corporation 功能描述:MOSFET, N, RF, DE275 制造商:IXYS Corporation 功能描述:RF MOSFET, N CHANNEL, 500V, DE-275; Transistor Type:RF MOSFET; Drain Source Voltage Vds:500V; Continuous Drain Current Id:16A; Power Dissipation Pd:590W; Operating Temperature Min:-55C; Operating Temperature Max:175C; No. of Pins:6;RoHS Compliant: Yes
DE275-801N06-00 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 800V V(BR)DSS | 6A I(D)
DE275X2-102N06A 制造商:IXYS Corporation 功能描述:MOSFET N RF DE275X2 制造商:IXYS Corporation 功能描述:MOSFET, N, RF, DE275X2 制造商:IXYS Corporation 功能描述:DE275X2 Series N-Channel 1000 Vds 800 mOhms 50 nC 1180 W RF Power Mosfet 制造商:IXYS Corporation 功能描述:MOSFET, N CH, RF, 16A, 1KV, 1.18KW; Transistor Type:RF MOSFET; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:16A; Power Dissipation Pd:1.18kW; Operating Temperature Min:-55C; Operating Temperature Max:175C ;RoHS Compliant: Yes
DE275X2-501N16 制造商:IXYS 制造商全稱(chēng):IXYS Corporation 功能描述:RF Power MOSFET
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