參數(shù)資料
型號(hào): DG648BH45
廠商: DYNEX SEMICONDUCTOR LTD
元件分類: 晶閘管
英文描述: Gate Turn-off Thyristor
中文描述: 1169.65 A, 4500 V, GATE TURN-OFF SCR
封裝: H, 4 PIN
文件頁數(shù): 10/19頁
文件大?。?/td> 221K
代理商: DG648BH45
DG648BH45
10/19
0
500
1000
1500
2000
2500
3000
On-state current I
T
- (A)
4000
3000
2000
1000
0
T
O
Conditions:
T
j
= 25
C,
C
S
= 2.0μF,
dI
GQ
/dt = 40A/μs
5000
0.5x V
DRM
0.75x V
DRM
V
DRM
20
30
40
50
60
70
Rate of rise of reverse gate current dI
GQ
/dt - (A/μs)
6000
5000
4000
3000
2000
T
O
Conditions:
T
j
= 25
C,
C
= 2.0μF,
I
T
= 2000A
0.5x V
DRM
0.75x V
DRM
V
DRM
Fig.15 Turn-off energy vs on-state current
Fig.16 Turn-off energy vs rate of rise of reverse gate current
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