參數資料
型號: DG648BH45
廠商: DYNEX SEMICONDUCTOR LTD
元件分類: 晶閘管
英文描述: Gate Turn-off Thyristor
中文描述: 1169.65 A, 4500 V, GATE TURN-OFF SCR
封裝: H, 4 PIN
文件頁數: 16/19頁
文件大?。?/td> 221K
代理商: DG648BH45
DG648BH45
16/19
20
30
40
50
60
70
Rate of rise of reverse gate current dI
GQ
/dt - (A/μs)
7000
6000
5000
4000
3000
T
G
Conditions:
C
= 2.0μF,
I
T
= 2000A
T
j
= 25
C
T
J
= 125
C
0
0.1
500
1000
R
-
μ
s
Gate cathode resistance R
GK
- (Ohms)
V
D
= 3000V
V
D
= 2250V
1.0
10
100
1000
T
j
= 125
C
Fig.27 Turn-off gate charge vs rate of rise of reverse gate current
Fig.28 Rate of rise of off-state voltage vs gate cathode resistance
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