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參數(shù)資料
| 型號： | DS3510T+T&R |
| 廠商： | Maxim Integrated Products |
| 文件頁數(shù)： | 4/17頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC I2C GAMMA/VCOM BUFF 48-TQFN |
| 產(chǎn)品培訓(xùn)模塊： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 標(biāo)準(zhǔn)包裝： | 2,500 |
| 應(yīng)用： | TFT-LCD 面板：伽瑪緩沖器，VCOM 驅(qū)動器 |
| 輸出類型： | 滿擺幅 |
| 電路數(shù)： | 10 |
| 電流 - 電源： | 6.7mA |
| 電流 - 輸出 / 通道： | 4mA |
| 電壓 - 電源，單路/雙路(±)： | 9 V ~ 15 V |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 48-WFQFN 裸露焊盤 |
| 供應(yīng)商設(shè)備封裝： | 48-TQFN-EP（7x7） |
| 包裝： | 帶卷 (TR) |
DS3510
I2C Gamma and VCOM Buffer with EEPROM
12
______________________________________________________________________________________
Memory Organization
Memory Description
The list of registers/memory contained in the DS3510 is
shown in the
Memory Map. Also shown for each of the
registers is the memory type and accessibility, as well
as the power-up default values for volatile locations and
factory-programmed defaults for the NV locations.
Detailed register descriptions for the registers shown in
bold follow in the
Detailed Register Descriptions sec-
tion. Furthermore, additional information regarding
reading and writing the memory is located in the
I2C
Serial Interface Description section.
NAME
ADDR
(HEX)
DESCRIPTION
MEMORY TYPE
I2C
ACCESS
DEFAULT (HEX)
VCOM Latch A
00
Data for I2C Control of VCOM
Volatile
R/W
00
GM1 Latch A
01
Data for I2C Control of GM1
Volatile
R/W
00
02
Data for I2C Control of GM2
Volatile
R/W
00
GM3 Latch A
03
Data for I2C Control of GM3
Volatile
R/W
00
GM4 Latch A
04
Data for I2C Control of GM4
Volatile
R/W
00
GM5 Latch A
05
Data for I2C Control of GM5
Volatile
R/W
00
GM6 Latch A
06
Data for I2C Control of GM6
Volatile
R/W
00
GM7 Latch A
07
Data for I2C Control of GM7
Volatile
R/W
00
GM8 Latch A
08
Data for I2C Control of GM8
Volatile
R/W
00
GM9 Latch A
09
Data for I2C Control of GM9
Volatile
R/W
00
GM10 Latch A
0A
Data for I2C Control of GM10
Volatile
R/W
00
Reserved
0B–0F
Reserved
—
VCOM Bank A–D
10–13
VCOM EEPROM Data (4 Bytes)
NV
R/W
80
GM1 Bank A–D
14–17
GM1 EEPROM Data (4 Bytes)
NV
R/W
80
GM2 Bank A–D
18–1B
GM2 EEPROM Data (4 Bytes)
NV
R/W
80
GM3 Bank A–D
1C–1F
GM3 EEPROM Data (4 Bytes)
NV
R/W
80
GM4 Bank A–D
20–23
GM4 EEPROM Data (4 Bytes)
NV
R/W
80
GM5 Bank A–D
24–27
GM5 EEPROM Data (4 Bytes)
NV
R/W
80
GM6 Bank A–D
28–2B
GM6 EEPROM Data (4 Bytes)
NV
R/W
80
GM7 Bank A–D
2C–2F
GM7 EEPROM Data (4 Bytes)
NV
R/W
80
GM8 Bank A–D
30–33
GM8 EEPROM Data (4 Bytes)
NV
R/W
80
GM9 Bank A–D
34–37
GM9 EEPROM Data (4 Bytes)
NV
R/W
80
GM10 Bank A–D
38–3B
GM10 EEPROM Data (4 Bytes)
NV
R/W
80
Reserved
3C–4F
Reserved
—
Soft S0/S1
50
Software Bank Select Bits
Volatile
R/W
00
Standby
51
Standby (xxxxxxx, Standby)
Volatile
R/W
00
Reserved
52–56
Reserved
—
Status
57
Status Bits (LD, xxxxx, S1, S0)
Status
R
N/A
Reserved
58–5F
Reserved
—
Control Register (CR)
60
Control Register
NV
R/W
10
Reserved
61–FF
Reserved
—
Memory Map
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS3511MP000 | 制造商:Thomas & Betts 功能描述:30A,PLG,4P5W,MG,511,220/115V |
| DS35-12A | 功能描述:整流器 35 Amps 1200V RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| DS3513MP000 | 制造商:Thomas & Betts 功能描述:30A,PLG,4P5W,MG,513,230VDC |
| DS3514 | 制造商:MAXIM 制造商全稱:Maxim Integrated Products 功能描述:I2C Gamma and VCOM Buffer with EEPROM |
| DS3514FP000 | 制造商:Thomas & Betts 功能描述:30A,CON,,4P5W,MG,514,3PY347V |
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