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參數(shù)資料
| 型號： | DSM2180F3V90T6 |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | 數(shù)字信號處理 |
| 英文描述： | DSM (Digital Signal Processor System Memory) For Analog Devices ADSP-218X Family (5V Supply) |
| 中文描述： | 帝斯曼（數(shù)字信號處理器系統(tǒng)內(nèi)存）模擬器件公司的ADSP - 218X系列（5V電源） |
| 文件頁數(shù)： | 23/63頁 |
| 文件大小： | 809K |
| 代理商： | DSM2180F3V90T6 |
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DSM2180F3
Figure 11. Data Toggle Flowchart
The Error Flag (DQ5) bit is set if either an internal
time-out occurred while the embedded algorithm
attempted to program the byte, or if the DSP at-
tempted to program a 1 to a bit that was not erased
(not erased is logic 0).
It is suggested (as with all Flash memories) to read
the location again after the embedded program-
ming algorithm has completed, to compare the
byte that was written to Flash memory with the
byte that was intended to be written.
When using the Data Toggle method after an
Erase cycle, Figure 11 still applies. the Toggle
Flag (DQ6) bit toggles until the Erase cycle is com-
plete. A 1 on the Error Flag (DQ5) bit indicates a
time-out condition on the Erase cycle, a 0 indi-
cates no error. The DSP can read any location
within the sector being erased to get the Toggle
Flag (DQ6) bit and the Error Flag (DQ5) bit.
PSDsoft Express generates ANSI C code func-
tions which implement these Data Toggling algo-
rithms.
Erasing Flash Memory
Flash Bulk Erase.
The Flash Bulk Erase instruc-
tion sequence uses six write operations followed
by a read operation of the status register, as de-
scribed in Table 5. If any byte of the Bulk Erase in-
struction sequence is wrong, the Bulk Erase
instruction sequence aborts and the device is re-
set to the Read Flash memory status. The Bulk
Erase command may be addresses to any one in-
dividual valid Flash memory segment (FS0-FS7)
and the entire array (all segments) will be erased.
During a Bulk Erase, the memory status may be
checked by reading the Error Flag (DQ5) bit, the
Toggle Flag (DQ6) bit, and the Data Polling Flag
(DQ7) bit, as detailed in the section entitled “Pro-
gramming Flash Memory”, on page 21. The Error
Flag (DQ5) bit returns a 1 if there has been an
Erase Failure (maximum number of Erase cycles
have been executed).
It is not necessary to program the memory with
00h because the device automatically does this
before erasing to 0FFh.
During execution of the Bulk Erase instruction se-
quence, the Flash memory does not accept any in-
struction sequences.
The address provided with the Flash Bulk Erase
command sequence (Table 5) may select any one
of the eight internal Flash memory Sector Select
signals (FS0 - FS7). An erase of the entire Flash
memory array will occur even though the com-
mand was sent to just one Flash memory sector.
Flash Sector Erase.
The Sector Erase instruc-
tion sequence uses six write operations, as de-
scribed in Table 5. Additional Flash Sector Erase
codes and Flash memory sector addresses can be
written subsequently to erase other Flash memory
sectors in parallel, without further coded cycles, if
the additional bytes are transmitted in a shorter
time than the time-out period of about 100 μs. The
input of a new Sector Erase code restarts the time-
out period.
The status of the internal timer can be monitored
through the level of the Erase Time-out Flag (DQ3)
bit. If the Erase Time-out Flag (DQ3) bit is 0, the
Sector Erase instruction sequence has been re-
ceived and the time-out period is counting. If the
Erase Time-out Flag (DQ3) bit is 1, the time-out
period has expired and the device is busy erasing
the Flash memory sector(s). Before and during
Erase time-out, any instruction sequence other
than Suspend Sector Erase and Resume Sector
Erase instruction sequences abort the cycle that is
currently in progress, and reset the device to Read
Array mode. It is not necessary to program the
Flash memory sector with 00h as the device does
this automatically before erasing (byte=FFh).
During a Sector Erase, the memory status may be
checked by reading the Error Flag (DQ5) bit, the
Toggle Flag (DQ6) bit, and the Data Polling Flag
(DQ7) bit, as detailed in the section entitled “Pro-
gramming Flash Memory”, on page 21.
During execution of the Erase cycle, the Flash
memory accepts only Reset and Suspend Sector
Erase instruction sequences. Erasure of one
READ
DQ5 & DQ6
START
READ DQ6
FAIL
PASS
AI01370B
D=
TOGGLE
NO
NO
YES
YES
DQ5
= 1
NO
YES
D=
TOGGLE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DSM2190F4 | 16-bit fixed point DSP with Flash |
| DSM2190F4V | 16-bit fixed point DSP with Flash |
| DSM2190F4V-15K6 | 16-bit fixed point DSP with Flash |
| DSM2190F4V-15T6 | 16-bit fixed point DSP with Flash |
| DSM3MA | GENERAL-USE RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DSM2180F3V-90T6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:DSM (Digital Signal Processor System Memory) for analog devices ADSP-218X family (5 V supply) |
| DSM2190F4 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:DSM (Digital Signal Processor System Memory) For Analog Devices ADSP-2191 DSPs (3.3V Supply) |
| DSM2190F4V | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:DSM (Digital Signal Processor System Memory) For Analog Devices ADSP-2191 DSPs (3.3V Supply) |
| DSM2190F4V-15K6 | 功能描述:SPLD - 簡單可編程邏輯器件 3.3V 16M 150ns RoHS:否 制造商:Texas Instruments 邏輯系列:TICPAL22V10Z 大電池數(shù)量:10 最大工作頻率:66 MHz 延遲時間:25 ns 工作電源電壓:4.75 V to 5.25 V 電源電流:100 uA 最大工作溫度:+ 75 C 最小工作溫度:0 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:DIP-24 |
| DSM2190F4V-15T6 | 功能描述:SPLD - 簡單可編程邏輯器件 3.3V 16M 150ns RoHS:否 制造商:Texas Instruments 邏輯系列:TICPAL22V10Z 大電池數(shù)量:10 最大工作頻率:66 MHz 延遲時間:25 ns 工作電源電壓:4.75 V to 5.25 V 電源電流:100 uA 最大工作溫度:+ 75 C 最小工作溫度:0 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:DIP-24 |
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