| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| SIS436DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 25V PPAK 1212-8 | 0 | 1:$0.95000 25:$0.73120 100:$0.64500 250:$0.55900 500:$0.47300 1,000:$0.37625 |
| SIS436DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 25V PPAK 1212-8 | 0 | 3,000:$0.31175 6,000:$0.29025 15,000:$0.27950 30,000:$0.26875 |
| IRF9Z24STRLPBF | Vishay Siliconix | MOSFET P-CH 60V 11A D2PAK | 0 | 800:$1.11668 |
| SQ2319ES-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 40V TO-236 | 0 | 3,000:$0.30450 |
| SI4880DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 13A 8-SOIC | 0 | 2,500:$1.10700 |
| SIB411DK-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V PPAK SC75-6L | 0 | 3,000:$0.30450 |
| SI7804DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 1212-8 | 0 | 3,000:$0.30450 |
| SI4493DY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 10A 8SOIC | 0 | 2,500:$1.10700 |
| SI4401DY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 40V 8-SOIC | 0 | 2,500:$1.09755 |
| SIR882ADP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 60A POWERPAK | 0 | 1:$2.84000 25:$2.18720 100:$1.98450 250:$1.78200 500:$1.53900 1,000:$1.29600 |
| SIR882ADP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 60A POWERPAK | 0 | 1:$2.84000 25:$2.18720 100:$1.98450 250:$1.78200 500:$1.53900 1,000:$1.29600 |
| SIR882ADP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 60A POWERPAK | 0 | 3,000:$1.09350 6,000:$1.05300 15,000:$1.01250 30,000:$0.99225 75,000:$0.97200 |
| SIE882DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 25V POLARPAK | 0 | 3,000:$1.09350 |
| IRL640STRRPBF | Vishay Siliconix | MOSFET N-CH 200V 17A D2PAK | 0 | 800:$1.09305 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 標準 |
| 漏極至源極電壓(Vdss): | 25V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 16A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 10.5 毫歐 @ 10A，10V |
| Id 時的 Vgs(th)（最大）: | 2.3V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 22nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 855pF @ 10V |
| 功率 - 最大: | 27.7W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | PowerPAK? 1212-8 |
| 供應商設備封裝: | PowerPAK? 1212-8 |
| 包裝: | 剪切帶 (CT) |