參數(shù)資料
型號(hào): EDE1108ABSE-5C-E
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 1G bits DDR2 SDRAM
中文描述: 128M X 8 DDR DRAM, 0.5 ns, PBGA68
封裝: ROHS COMPLIANT, FBGA-68
文件頁(yè)數(shù): 35/82頁(yè)
文件大?。?/td> 618K
代理商: EDE1108ABSE-5C-E
EDE1104ABSE, EDE1108ABSE, EDE1116ABSE
Data Sheet E0852E50 (Ver. 5.0)
35
Current state
/CS
/RAS /CAS /WE
Address
Command
Operation
Note
Write
H
×
×
×
×
DESL
Continue burst to end
-> Write recovering
Continue burst to end
-> Write recovering
ILLEGAL
L
H
H
H
×
NOP
L
H
L
H
BA, CA, A10 (AP)
READ/READA
1
L
H
L
L
BA, CA, A10 (AP)
WRIT/WRITA
Burst interrupt
1, 4
L
L
H
H
BA, RA
ACT
ILLEGAL
1
L
L
H
L
BA
PRE
ILLEGAL
1, 8
L
L
H
L
A10 (AP)
PALL
ILLEGAL
8
L
L
L
H
×
REF
ILLEGAL
L
L
L
H
×
SELF
ILLEGAL
L
L
L
L
BA, MRS-OPCODE
MRS
ILLEGAL
Read with auto
precharge
L
L
L
L
BA, EMRS-OPCODE
EMRS (1) (2)
ILLEGAL
Continue burst to end ->
Precharging
Continue burst to end ->
Precharging
ILLEGAL
H
×
×
×
×
DESL
L
H
H
H
×
NOP
L
H
L
H
BA, CA, A10 (AP)
READ/READA
1, 7
L
H
L
L
BA, CA, A10 (AP)
WRIT/WRITA
ILLEGAL
1, 7
L
L
H
H
BA, RA
ACT
ILLEGAL
1, 7
L
L
H
L
BA
PRE
ILLEGAL
1, 7, 8
L
L
H
L
A10 (AP)
PALL
ILLEGAL
7, 8
L
L
L
H
×
REF
ILLEGAL
L
L
L
H
×
SELF
ILLEGAL
L
L
L
L
BA, MRS-OPCODE
MRS
ILLEGAL
L
L
L
L
BA, EMRS-OPCODE
EMRS (1) (2)
ILLEGAL
Continue burst to end
->Write recovering with auto
precharge
Continue burst to end
->Write recovering with auto
precharge
ILLEGAL
Write with auto
Precharge
H
×
×
×
×
DESL
L
H
H
H
×
NOP
L
H
L
H
BA, CA, A10 (AP)
READ/READA
1, 7
L
H
L
L
BA, CA, A10 (AP)
WRIT/WRITA
ILLEGAL
1, 7
L
L
H
H
BA, RA
ACT
ILLEGAL
1, 7
L
L
H
L
BA
PRE
ILLEGAL
1, 7, 8
L
L
H
L
A10 (AP)
PALL
ILLEGAL
7, 8
L
L
L
H
×
REF
ILLEGAL
L
L
L
H
×
SELF
ILLEGAL
L
L
L
L
BA, MRS-OPCODE
MRS
ILLEGAL
L
L
L
L
BA, EMRS-OPCODE
EMRS (1) (2)
ILLEGAL
相關(guān)PDF資料
PDF描述
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