參數(shù)資料
型號: EDE1108ABSE-5C-E
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 1G bits DDR2 SDRAM
中文描述: 128M X 8 DDR DRAM, 0.5 ns, PBGA68
封裝: ROHS COMPLIANT, FBGA-68
文件頁數(shù): 6/82頁
文件大?。?/td> 618K
代理商: EDE1108ABSE-5C-E
EDE1104ABSE, EDE1108ABSE, EDE1116ABSE
Data Sheet E0852E50 (Ver. 5.0)
6
Recommended DC Operating Conditions (SSTL_18)
Parameter
Symbol
min.
typ.
max.
Unit
Notes
Supply voltage
VDD
1.7
1.8
1.9
V
4
Supply voltage for output
VDDQ
1.7
1.8
1.9
V
4
Input reference voltage
VREF
0.49
×
VDDQ
0.50
×
VDDQ 0.51
×
VDDQ
V
1, 2
Termination voltage
VTT
VREF
0.04
VREF
VREF + 0.04
V
3
DC input logic high
VIH (DC)
VREF + 0.125
VDDQ + 0.3
V
DC input low
AC input logic high
-8E, -6C, -6E
-5C, -4A
AC input low
-8E, 6C, -6E
-5C, -4A
VIL (DC)
0.3
VREF – 0.125
V
VIH (AC)
VREF
+
0.200
V
VIH (AC)
VREF + 0.250
V
VIL (AC)
VREF – 0.200
V
VIL (AC)
VREF
0.250
V
Notes: 1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically
the value of VREF is expected to be about 0.5
×
VDDQ of the transmitting device and VREF are expected
to track variations in VDDQ.
2. Peak to peak AC noise on VREF may not exceed
±
2% VREF (DC).
3. VTT of transmitting device must track VREF of receiving device.
4. VDDQ tracks with VDD, VDDL tracks with VDD. AC parameters are measured with VDD, VDDQ and
VDDL tied together.
相關PDF資料
PDF描述
EDE1108ABSE-6C-E 1G bits DDR2 SDRAM
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