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參數(shù)資料
| 型號： | EDE1116ABSE-4A-E |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 1G bits DDR2 SDRAM |
| 中文描述： | 64M X 16 DDR DRAM, 0.6 ns, PBGA92 |
| 封裝： | ROHS COMPLIANT, FBGA-92 |
| 文件頁數(shù)： | 12/82頁 |
| 文件大?。?/td> | 618K |
| 代理商： | EDE1116ABSE-4A-E |
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EDE1104ABSE, EDE1108ABSE, EDE1116ABSE
Data Sheet E0852E50 (Ver. 5.0)
12
ODT DC Electrical Characteristics (TC = 0
°
C to +85
°
C, VDD, VDDQ = 1.8V
±
0.1V)
Parameter
Symbol
min
typ
max
Unit
Note
Rtt effective impedance value for EMRS (A6, A2)
=
0, 1
;
75
Ω
Rtt1 (eff)
60
75
90
Ω
1
Rtt effective impedance value for EMRS (A6, A2)
=
1, 0
;
150
Ω
Rtt2 (eff)
120
150
180
Ω
1
Rtt effective impedance value for EMRS (A6, A2)
=
1, 1
;
50
Ω
Rtt3 (eff)
40
50
60
Ω
1
Deviation of VM with respect to VDDQ/2
Δ
VM
6
+
6
%
1
Note: 1. Test condition for Rtt measurements.
Measurement Definition for Rtt (eff)
Apply VIH (AC) and VIL (AC) to test pin separately, then measure current I(VIH(AC)) and I(VIL(AC)) respectively.
VIH(AC), and VDDQ values defined in SSTL
_
18.
))
(
(
))
(
(
)
(
)
(
AC
)
(
AC
VIL
I
VIH
I
AC
VIL
AC
VIH
eff
Rtt
=
Measurement Definition for
Δ
VM
Measure voltage (VM) at test pin (midpoint) with no load.
100
1
2
VDDQ
×
×
=
Δ
VM
VM
OCD Default Characteristics (TC = 0
°
C to +85
°
C, VDD, VDDQ = 1.8V
±
0.1V)
Parameter
min
typ
max
Unit
Notes
Output impedance
12.6
18
23.4
Ω
1, 5
Pull-up and pull-down mismatch
0
4
Ω
1, 2
Output slew rate
1.5
5
V/ns
3, 4
Notes: 1. Impedance measurement condition for output source DC current: VDDQ = 1.7V; VOUT = 1420mV;
(VOUT
VDDQ)/IOH must be less than 23.4
Ω
for values of VOUT between VDDQ and VDDQ
280mV.
Impedance measurement condition for output sink DC current: VDDQ = 1.7V; VOUT = 280mV;
VOUT/IOL must be less than 23.4
Ω
for values of VOUT between 0V and 280mV.
2. Mismatch is absolute value between pull up and pull down, both are measured at same temperature and
voltage.
3. Slew rate measured from VIL(AC) to VIH(AC).
4. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate
as measured from AC to AC. This is guaranteed by design and characterization.
5. DRAM I/O specifications for timing, voltage, and slew rate are no longer applicable if OCD is changed
from default settings.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EDE1116ABSE-5C-E | 1G bits DDR2 SDRAM |
| EDE2104ABSE | 2G bits DDR2 SDRAM |
| EDE2104ABSE-5C-E | 2G bits DDR2 SDRAM |
| EDE2104ABSE-6E-E | 2G bits DDR2 SDRAM |
| EDE2104ABSE-8G-E | 2G bits DDR2 SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EDE1116ABSE-5C-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM |
| EDE1116ABSE-6E-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM |
| EDE1116ACBG | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM |
| EDE1116ACBG-5C-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM |
| EDE1116ACBG-6E-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM |
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