參數(shù)資料
型號： EDE1116ABSE
廠商： Elpida Memory, Inc.
英文描述： 1G bits DDR2 SDRAM
中文描述： 1克位DDR2 SDRAM內(nèi)存
文件頁數(shù)： 64/82頁
文件大小： 618K
代理商： EDE1116ABSE
EDE1104ABSE, EDE1108ABSE, EDE1116ABSE
Data Sheet E0852E50 (Ver. 5.0)
64
Burst Write followed by Precharge
Minimum Write to Precharge Command spacing to the same bank = WL + BL/2 clocks + tWR
For write cycles, a delay must be satisfied from the completion of the last burst write cycle until the precharge
command can be issued. This delay is known as a write recovery time (tWR) referenced from the completion of the
burst write to the precharge command. No precharge command should be issued prior to the tWR delay, as DDR2
SDRAM allows the burst interrupt operation only Read by Read or Write by Write at the boundary of burst 4.
in3
in1
NOP
CK
/CK
T0
T1
T2
T3
T4
T5
T6
T7
T8
Command
DQS, /DQS
DQ
≥
tWR
Completion of
the burst write
WL = 3
in0
in2
Posted
WRIT
PRE
Burst Write Followed by Precharge (WL = (RL-1) =3)
Posted
WRIT
CK
/CK
T0
T1
T2
T3
T4
T5
T6
T7
T9
Command
DQS, /DQS
DQ
WL = 4
in0
in1
in2
in3
PRE
≥
tWR
Completion of
the burst write
NOP
Burst Write Followed by Precharge (WL = (RL-1) = 4)
相關(guān)PDF資料
PDF描述
EDE1116ABSE-4A-E 1G bits DDR2 SDRAM
EDE1116ABSE-5C-E 1G bits DDR2 SDRAM
EDE2104ABSE 2G bits DDR2 SDRAM
EDE2104ABSE-5C-E 2G bits DDR2 SDRAM
EDE2104ABSE-6E-E 2G bits DDR2 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDE1116ABSE-4A-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM
EDE1116ABSE-5C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM
EDE1116ABSE-6E-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM
EDE1116ACBG 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM
EDE1116ACBG-5C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1G bits DDR2 SDRAM
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