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參數(shù)資料
| 型號： | EDE2108ABSE |
| 廠商： | Elpida Memory, Inc. |
| 英文描述： | 2G bits DDR2 SDRAM |
| 中文描述： | 第二代位DDR2 SDRAM內(nèi)存 |
| 文件頁數(shù)： | 31/81頁 |
| 文件大?。?/td> | 604K |
| 代理商： | EDE2108ABSE |
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EDE2104ABSE, EDE2108ABSE
Preliminary Data Sheet E1196E10 (Ver. 1.0)
31
CKE (input pin)
CKE high activates, and CKE low deactivates, internal clock signals and device input buffers and output drivers.
Taking CKE low provides precharge power-down and Self-Refresh operation (all banks idle), or active power-down
(row active in any bank). CKE is synchronous for power-down entry and exit, and for self-refresh entry. CKE is
asynchronous for self-refresh exit. CKE must be maintained high throughout read and write accesses. Input buffers,
excluding CK, /CK and CKE are disabled during power-down. Input buffers, excluding CKE, are disabled during self-
refresh.
DM (input pins)
DM is an input mask signal for write data. Input data is masked when DM is sampled high coincident with that input
data during a Write access. DM is sampled on both edges of DQS. Although DM pins are input only, the DM
loading matches the DQ and DQS loading.
For
×
8 configuration, DM function will be disabled when RDQS function is enabled by EMRS.
DQ (input/output pins)
Bi-directional data bus.
DQS, /DQS (input/output pins)
Output with read data, input with write data for source synchronous operation. Edge-aligned with read data,
centered in write data. Used to capture write data. /DQS can be disabled by EMRS.
RDQS, /RDQS (output pins)
Differential Data Strobe for READ operation only. DM and RDQS functions are switch able by EMRS. These pins
exist only in
×
8 configuration. /RDQS output will be disabled when /DQS is disabled by EMRS
.
ODT (input pins)
ODT (On Die Termination control) is a registered high signal that enables termination resistance internal to the DDR
2 SDRAM. When enabled, ODT is only applied to each DQ, DQS, /DQS, RDQS, /RDQS, and DM signal for
×
4,
×
8
configurations. The ODT pin will be ignored if the Extended Mode Register (EMRS) is programmed to disable ODT.
Any time the EMRS enables the ODT function; ODT may not be driven high until eight clocks after the EMRS has
been enabled.
VDD, VSS, VDDQ, VSSQ (power supply)
VDD and VSS are power supply pins for internal circuits. VDDQ and VSSQ are power supply pins for the output
buffers.
VDDL and VSSDL (power supply)
VDDL and VSSDL are power supply pins for DLL circuits.
VREF (Power supply)
SSTL_18 reference voltage: (0.50
±
0.01)
×
VDDQ
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EDE2108ABSE-5C-E | 2G bits DDR2 SDRAM |
| EDE2108ABSE-6E-E | 2G bits DDR2 SDRAM |
| EDE2108ABSE-8G-E | 2G bits DDR2 SDRAM |
| EDE2508ABSE | 256M bits DDR2 SDRAM |
| EDE2508ABSE-5C-E | 256M bits DDR2 SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EDE2108ABSE-5C-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2G bits DDR2 SDRAM |
| EDE2108ABSE-6E-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2G bits DDR2 SDRAM |
| EDE2108ABSE-8G-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:2G bits DDR2 SDRAM |
| EDE2108AEBG | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Lead-free (RoHS compliant) and Halogen-free |
| EDE2108AEBG-8E-F | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:Lead-free (RoHS compliant) and Halogen-free |
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