參數(shù)資料
型號(hào): EDE2508ABSE-GE-E
廠商: ELPIDA MEMORY INC
元件分類(lèi): DRAM
英文描述: 256M bits DDR2 SDRAM for HYPER DIMM
中文描述: 32M X 8 DDR DRAM, 0.4 ns, PBGA60
封裝: ROHS COMPLIANT, FBGA-60
文件頁(yè)數(shù): 24/66頁(yè)
文件大?。?/td> 708K
代理商: EDE2508ABSE-GE-E
EDE2508ABSE, EDE2516ABSE
Preliminary Data Sheet E0573E30 (Ver. 3.0)
24
Current state
/CS
/RAS /CAS /WE
Address
Command
Operation
Note
Extended Mode
H
×
×
×
×
DESL
Nop -> Enter idle after tMRD
register accessing L
H
H
H
×
NOP
Nop -> Enter idle after tMRD
L
H
L
H
BA, CA, A10 (AP)
READ
ILLEGAL
L
H
L
H
BA, CA, A10 (AP)
READA
ILLEGAL
L
H
L
L
BA, CA, A10 (AP)
WRIT
ILLEGAL
L
H
L
L
BA, CA, A10 (AP)
WRITA
ILLEGAL
L
L
H
H
BA, RA
ACT
ILLEGAL
L
L
H
L
BA, A10 (AP)
PRE
ILLEGAL
L
L
H
L
A10 (AP)
PALL
ILLEGAL
L
L
L
H
×
REF
ILLEGAL
L
L
L
H
×
SELF
ILLEGAL
L
L
L
L
BA, MRS-OPCODE
MRS
ILLEGAL
Remark: H = VIH. L = VIL.
×
= VIH or VIL
Notes: 1. This command may be issued for other banks, depending on the state of the banks.
2. All banks must be in "IDLE".
3. All AC timing specs must be met.
4. Only allowed at the boundary of 4 bits burst. Burst interruption at other timings are illegal.
L
L
L
L
BA, EMRS-OPCODE
EMRS
ILLEGAL
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