參數(shù)資料
型號(hào)： EDE2516ABSE-6E-E
廠商： ELPIDA MEMORY INC
元件分類(lèi)： DRAM
英文描述： 256M bits DDR2 SDRAM
中文描述： 16M X 16 DDR DRAM, 0.45 ns, PBGA84
封裝： ROHS COMPLIANT, FBGA-84
文件頁(yè)數(shù)： 22/66頁(yè)
文件大?。?/td> 708K
代理商： EDE2516ABSE-6E-E
EDE2508ABSE, EDE2516ABSE
Preliminary Data Sheet E0573E30 (Ver. 3.0)
22
Current state
/CS
/RAS /CAS /WE
Address
Command
Operation
Note
Precharging
H
×
×
×
×
DESL
Nop -> Enter idle after tRP
L
H
H
H
×
NOP
Nop -> Enter idle after tRP
L
H
L
H
BA, CA, A10 (AP)
READ
ILLEGAL
1
L
H
L
H
BA, CA, A10 (AP)
READA
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRIT
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRITA
ILLEGAL
1
L
L
H
H
BA, RA
ACT
ILLEGAL
1
L
L
H
L
BA, A10 (AP)
PRE
Nop -> Enter idle after tRP
L
L
H
L
A10 (AP)
PALL
Nop -> Enter idle after tRP
L
L
L
H
×
REF
ILLEGAL
L
L
L
H
×
SELF
ILLEGAL
L
L
L
L
BA, MRS-OPCODE
MRS
ILLEGAL
L
L
L
L
BA, EMRS-OPCODE
EMRS
ILLEGAL
Row activating
H
×
×
×
×
DESL
Nop -> Enter bank active after tRCD
L
H
H
H
×
NOP
Nop -> Enter bank active after tRCD
L
H
L
H
BA, CA, A10 (AP)
READ
ILLEGAL
1
L
H
L
H
BA, CA, A10 (AP)
READA
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRIT
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRITA
ILLEGAL
1
L
L
H
H
BA, RA
ACT
ILLEGAL
1
L
L
H
L
BA, A10 (AP)
PRE
ILLEGAL
L
L
H
L
A10 (AP)
PALL
ILLEGAL
L
L
L
H
×
REF
ILLEGAL
L
L
L
H
×
SELF
ILLEGAL
L
L
L
L
BA, MRS-OPCODE
MRS
ILLEGAL
L
L
L
L
BA, EMRS-OPCODE
EMRS
ILLEGAL
Write recovering
H
×
×
×
×
DESL
Nop -> Enter bank active after tWR
L
H
H
H
×
NOP
Nop -> Enter bank active after tWR
L
H
L
H
BA, CA, A10 (AP)
READ
ILLEGAL
1
L
H
L
H
BA, CA, A10 (AP)
READA
ILLEGAL
1
L
H
L
L
BA, CA, A10 (AP)
WRIT
New write
L
H
L
L
BA, CA, A10 (AP)
WRITA
New write
L
L
H
H
BA, RA
ACT
ILLEGAL
1
L
L
H
L
BA, A10 (AP)
PRE
ILLEGAL
1
L
L
H
L
A10 (AP)
PALL
ILLEGAL
L
L
L
H
×
REF
ILLEGAL
L
L
L
H
×
SELF
ILLEGAL
L
L
L
L
BA, MRS-OPCODE
MRS
ILLEGAL
L
L
L
L
BA, EMRS-OPCODE
EMRS
ILLEGAL
相關(guān)PDF資料
PDF描述
EDE2508ABSE-GE 256M bits DDR2 SDRAM for HYPER DIMM
EDE2516ABSE-GE 256M bits DDR2 SDRAM for HYPER DIMM
EDE2508ABSE-GE-E 256M bits DDR2 SDRAM for HYPER DIMM
EDE2516ABSE 256M bits DDR2 SDRAM
EDE2516ABSE-GE-E 256M bits DDR2 SDRAM for HYPER DIMM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDE2516ABSE-GE 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:256M bits DDR2 SDRAM for HYPER DIMM
EDE2516ABSE-GE-E 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:256M bits DDR2 SDRAM for HYPER DIMM
EDE2516ACSE-5C-E 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:256M bits DDR2 SDRAM
EDE2516ACSE-6E-E 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:256M bits DDR2 SDRAM
EDE2516ACSE-8E-E 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:256M bits DDR2 SDRAM
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