參數(shù)資料
型號(hào)： EDE2516ABSE-6E-E
廠商： ELPIDA MEMORY INC
元件分類： DRAM
英文描述： 256M bits DDR2 SDRAM
中文描述： 16M X 16 DDR DRAM, 0.45 ns, PBGA84
封裝： ROHS COMPLIANT, FBGA-84
文件頁數(shù)： 5/66頁
文件大?。?/td> 708K
代理商： EDE2516ABSE-6E-E
EDE2508ABSE, EDE2516ABSE
Preliminary Data Sheet E0573E30 (Ver. 3.0)
5
Electrical Specifications
All voltages are referenced to VSS (GND)
Execute power-up and Initialization sequence before proper device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Notes
Power supply voltage
VDD
1.0 to
+
2.3
V
1
Power supply voltage for output
VDDQ
0.5 to
+
2.3
V
1
Power supply voltage for DLL
VDDL
0.5 to
+
2.3
V
1
Input voltage
VIN
0.5 to
+
2.3
V
1
Output voltage
VOUT
0.5 to
+
2.3
V
1
Storage temperature
Tstg
55 to
+
100
°
C
1, 2
Power dissipation
PD
1.0
W
1
Short circuit output current
IOUT
50
mA
1
Notes: 1. Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage temperature is the case surface temperature on the center/top side of the DRAM.
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Operating Temperature Condition
Parameter
Symbol
Rating
Unit
Notes
Operating case temperature
TC
0 to
+
95
°
C
1, 2
Notes: 1. Operating temperature is the case surface temperature on the center/top side of the DRAM.
2. Supporting 0°C to +85°C with full AC and DC specifications.
Supporting 0°C to +85°C and being able to extend to +95°C with doubling auto-refresh commands in
frequency to a 32ms period (tREFI = 3.9
μ
s) and higher temperature Self-Refresh entry via A7 "1" on
EMRS (2).
相關(guān)PDF資料
PDF描述
EDE2508ABSE-GE 256M bits DDR2 SDRAM for HYPER DIMM
EDE2516ABSE-GE 256M bits DDR2 SDRAM for HYPER DIMM
EDE2508ABSE-GE-E 256M bits DDR2 SDRAM for HYPER DIMM
EDE2516ABSE 256M bits DDR2 SDRAM
EDE2516ABSE-GE-E 256M bits DDR2 SDRAM for HYPER DIMM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDE2516ABSE-GE 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM for HYPER DIMM
EDE2516ABSE-GE-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM for HYPER DIMM
EDE2516ACSE-5C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM
EDE2516ACSE-6E-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM
EDE2516ACSE-8E-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR2 SDRAM
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