Data Sheet
ADG884
Rev. D | Page 3 of 16
SPECIFICATIONS
VDD = 5 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1.
Parameter
25°C
40°C to +85°C
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 to VDD
V
On Resistance, RON
0.28
Ω typ
VDD = 4.5 V, VS = 0 V to VDD, IS = 100 mA
0.37
0.41
Ω max
On-Resistance Match Between Channels, RON
0.01
Ω typ
VDD = 4.5 V, VS = 2 V, IS = 100 mA
0.035
0.05
Ω max
On-Resistance Flatness, RFLAT (On)
0.1
Ω typ
VDD = 4.5 V, VS = 0 V to VDD
0.13
0.15
Ω max
IS = 100 mA
LEAKAGE CURRENTS
VDD = 5.5 V
Source Off Leakage, IS (Off )
±0.2
nA typ
VS = 0.6 V/4.5 V, VD = 4.5 V/0.6 V; see Figure 19 Channel On Leakage, ID, IS (On)
±0.2
nA typ
DIGITAL INPUTS
Input High Voltage, VINH
2.0
V min
Input Low Voltage, VINL
0.8
V max
Input Current, IINL or IINH
0.005
μA typ
VIN = VINL or VINH
±0.1
μA max
Digital Input Capacitance, CIN
2
pF typ
tON
42
ns typ
RL = 50 Ω, CL = 35 pF
50
53
ns max
tOFF
15
ns typ
RL = 50 Ω, CL = 35 pF
20
21
ns max
Break-Before-Make Time Delay, tBBM
16
ns typ
RL = 50 Ω, CL = 35 pF
10
ns min
Charge Injection
125
pC typ
VS = 1.5 V, RS = 0 Ω, CL = 1 nF; see Figure 23 Off Isolation
60
dB typ
RL = 50 Ω, CL = 5 pF, f = 100 kHz; see Figure 24 Channel-to-Channel Crosstalk
120
dB typ
S1A to S2A/S1B to S2B, RL = 50 Ω, CL = 5 pF,
60
dB typ
S1A to S1B/S2A to S2B, RL = 50 Ω, CL = 5 pF,
Total Harmonic Distortion, THD + N
0.017
% typ
RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 3.5 V p-p
Insertion Loss
0.03
dB typ
3 dB Bandwidth
18
MHz typ
CS (Off )
103
pF typ
CD, C(On)
295
pF typ
POWER REQUIREMENTS
VDD = 5.5 V
IDD
0.003
μA typ
Digital inputs = 0 V or 5.5 V
1
μA max
1 Guaranteed by design, not production tested.