Data Sheet
ADG884
Rev. D | Page 5 of 16
VDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.
Table 3.
Parameter
25°C
40°C to +85°C
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 to VDD
V
On Resistance, RON
0.4
Ω typ
VDD = 2.7 V, VS = 0 V to VDD
0.51
0.61
Ω max
On-Resistance Match Between Channels, RON
0.02
Ω typ
VDD = 2.7 V, VS = 0.6 V
0.07
0.1
Ω max
IS = 100 mA
On-Resistance Flatness, RFLAT (On)
0.18
Ω typ
VDD = 2.7 V, VS = 0 V to VDD
0.25
Ω max
IS = 100 mA
LEAKAGE CURRENTS
VDD = 3.6 V
Source Off Leakage, IS (Off )
±0.2
nA typ
VS = 0.6 V/3.3 V, VD = 3.3 V/0.6 V; see Figure 19 Channel On Leakage, ID, IS (On)
±0.2
nA typ
DIGITAL INPUTS
Input High Voltage, VINH
1.3
V min
Input Low Voltage, VINL
0.8
V max
Input Current, IINL or IINH
0.005
μA typ
VIN = VINL or VINH
±0.1
μA max
Digital Input Capacitance, CIN
2
pF typ
tON
42
ns typ
RL = 50 Ω, CL = 35 pF
56
62
ns max
tOFF
14
ns typ
RL = 50 Ω, CL = 35 pF
19
21
ns max
Break-Before-Make Time Delay, tBBM
24
ns typ
RL = 50 Ω, CL = 35 pF
10
ns min
Charge Injection
85
pC typ
VS = 1.25 V, RS = 0 Ω, CL = 1 nF; see Figure 23 Off Isolation
60
dB typ
RL = 50 Ω, CL = 5 pF, f = 100 kHz; see Figure 24 Channel-to-Channel Crosstalk
120
dB typ
S1A to S2A/S1B to S2B, RL = 50 V, CL = 5 pF,
60
dB typ
S1A to S1B/S2A to S2B, RL = 50 Ω, CL = 5 pF,
Total Harmonic Distortion, THD + N
0.03
% typ
RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 1.5 V p-p
Insertion Loss
0.03
dB typ
–3 dB Bandwidth
18
MHz typ
CS (Off )
110
pF typ
CD, CS (On)
300
pF typ
POWER REQUIREMENTS
VDD = 3.6 V
IDD
0.003
μA typ
Digital inputs = 0 V or 3.6 V
1
μA max
1 Guaranteed by design, not production tested.