參數(shù)資料
型號(hào)： FDG6322C
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： Dual N & P Channel Digital FET
中文描述： 220 mA, 25 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SC-70, 6 PIN
文件頁(yè)數(shù)： 3/12頁(yè)
文件大?。?/td> 247K
代理商： FDG6322C
Electrical Characteristics
(continued)
SWITCHING CHARACTERISTICS
(Note 2)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
t
D(on)
Turn - On Delay Time
N-Channel
V
DD
= 5 V, I
D
= 0.5 A,
V
GS
= 4.5 V, R
GEN
= 50
N-Ch
P-Ch
5
7
10
15
nS
t
r
Turn - On Rise Time
N-Ch
4.5
10
nS
P-Ch
8
16
t
D(off)
Turn - Off Delay Time
P-Channel
N-Ch
4
8
nS
V
DD
= -5 V, I
D
= -0.5 A,
V
GS
= -4.5 V, R
GEN
= 50
P-Ch
55
80
t
f
Turn - Off Fall Time
N-Ch
3.2
7
nS
P-Ch
35
60
Q
g
Total Gate Charge
N-Channel
N-Ch
0.29
0.4
nC
V
DS
= 5 V, I
D
= 0.22 A,
V
GS
= 4.5 V
P- Channel
P-Ch
1.1
1.5
Q
gs
Gate-Source Charge
N-Ch
0.12
nC
P-Ch
0.31
Q
gd
Gate-Drain Charge
V
DS
= -5 V, I
D
= -0.41 A,
V
GS
= -4.5 V
N-Ch
0.03
nC
P-Ch
0.29
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
N-Ch
0.25
A
P-Ch
-0.25
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 0.5 A
(Note 2)
V
GS
= 0 V, I
S
= -0.5 A
(Note 2)
N-Ch
0.8
1.2
V
P-Ch
-0.85
-1.2
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed
by design while R
CA
is determined by the user's board design. R
θ
JA
= 415
O
C/W on minimum mounting pad on FR-4 board in still air.
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDG6322C Rev.F
相關(guān)PDF資料
PDF描述
FDG6323 Integrated Load Switch
FDG6323L Tantalum Molded Capacitor; Capacitance: 2.2uF; Voltage: 6.3V; Case Size: 3.2x1.6 mm; Packaging: Tape & Reel
FDG6324L Integrated Load Switch
FDG6331L Integrated Load Switch
FDG6332C Tantalum Molded Capacitor; Capacitance: 220uF; Voltage: 6.3V; Packaging: Tape & Reel
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDG6322C_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P Channel Digital FET
FDG6322C_D87Z 功能描述:MOSFET Dual N&P Ch Digital RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDG6322C_NL 制造商:Freescale Semiconductor 功能描述:
FDG6322C_Q 功能描述:MOSFET SC70-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDG6323 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated Load Switch
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*