參數(shù)資料
型號(hào)： FQI19N10L
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： 100V Logic N-Channel MOSFET(漏源電壓為100V的邏輯N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管)
中文描述： 19 A, 100 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
封裝： I2PAK-3
文件頁(yè)數(shù)： 2/9頁(yè)
文件大?。?/td> 609K
代理商： FQI19N10L
Rev. A, August 2000
F
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
2000 Fairchild Semiconductor International
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.9mH, I
= 19A, V
DD
= 25V, R
= 25
,
Starting T
= 25°C
3. I
≤
19A, di/dt
≤
300A/
μ
s, V
DD
≤
BV
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
/
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250
μ
A
100
--
--
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25°C
--
0.09
--
V/°C
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 80 V, T
C
= 150°C
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
--
--
--
--
--
--
--
--
1
10
100
-100
μ
A
μ
A
nA
nA
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain-Source
On-Resistance
g
FS
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10 V, I
D
= 9.5 A
V
GS
= 5 V, I
D
= 9.5 A
V
DS
= 30 V, I
D
= 9.5 A
1.0
--
2.0
0.10
0.11
--
V
--
0.074
0.082
15
--
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
670
160
35
870
210
45
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
V
DD
= 50 V, I
D
= 19 A,
R
G
= 25
--
--
--
--
--
--
--
14
410
20
140
14
2.9
9.2
38
830
50
290
18
--
--
ns
ns
ns
ns
nC
nC
nC
V
DS
= 80 V, I
D
= 19 A,
V
GS
= 5 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
--
--
--
--
--
--
--
--
80
19
76
1.5
--
--
A
A
V
ns
μ
C
V
GS
= 0 V, I
S
= 19 A
V
GS
= 0 V, I
S
= 19 A,
dI
F
/ dt = 100 A/
μ
s
0.195
相關(guān)PDF資料
PDF描述
FQB19N10L 100V Logic N-Channel MOSFET(漏源電壓為100V的邏輯N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管)
FQI19N10 100V N-Channel MOSFET(漏源電壓為100V的N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管)
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參數(shù)描述
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