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參數(shù)資料
| 型號(hào)： | FRE160D |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 41A, 100V, 0.050 Ohm, Rad Hard, N-Channel Power MOSFETs |
| 中文描述： | 41 A, 100 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 49K |
| 代理商： | FRE160D |
4-37
FRE160D, FRE160R,
FRE160H
41A, 100V, 0.050 Ohm, Rad Hard,
N-Channel Power MOSFETs
File Number
3258.2
Package
TO-258AA
Symbol
Features
41A, 100V, RDS(on) = 0.050
Second Generation Rad Hard MOSFET Results From New Design Concepts
Gamma
- Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
- Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
- 10nA Per-RAD(Si)/sec Typically
- Pre-RAD Specifications for 3E13 Neutrons/cm
2
- Usable to 3E14 Neutrons/cm
2
Gamma Dot
Photo Current
Neutron
Description
The Intersil has designed a series of SECOND GENERATION hardened power
MOSFETs of both N and P channel enhancement types with ratings from 100V to
500V, 1A to 60A, and on resistance as low as 25m
. Total dose hardness is
offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from
1E13 for 500V product to 1E14 for 100V product. Dose rate hardness (GAMMA
DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n
o
)
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEU) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above.
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired
deviations from the data sheet.
Absolute Maximum Ratings
(TC = +25
o
C) Unless Otherwise Specified
FRE160D, R, H
100
100
UNITS
V
V
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain-Gate Voltage (RGS = 20k
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current
TC = +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = +100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation
TC = +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = +100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inductive Current, Clamped, L = 100
μ
H, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
41
26
100
±
20
A
A
A
V
150
60
1.20
100
41
100
W
W
W/
o
C
A
A
A
o
C
-55 to +150
300
o
C
June 1998
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FRE160H | 41A, 100V, 0.050 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRE260D | 31A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRE260H | 31A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRE260R | 31A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRE264D | 23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FRE160H | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:41A, 100V, 0.050 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRE160R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:41A, 100V, 0.050 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRE1A2 | 制造商:BACO Controls Inc 功能描述: |
| FRE200 | 制造商:Electrolube 功能描述:FREEZER, 200ML |
| FRE260D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:31A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs |
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