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參數(shù)資料
| 型號： | FRE160D |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 41A, 100V, 0.050 Ohm, Rad Hard, N-Channel Power MOSFETs |
| 中文描述： | 41 A, 100 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 49K |
| 代理商： | FRE160D |
4-38
Pre-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source Breakdown Volts
BVDSS
VGS = 0, ID = 1mA
100
-
V
Gate-Treshold Volts
VGS(th)
VDS = VGS, ID = 1mA
2.0
4.0
V
Gate-Body Leakage Forward
IGSSF
VGS = +20V
-
100
nA
Gate-Body Leakage Reverse
IGSSR
VGS = -20V
-
100
nA
Zero-Gate Voltage
Drain Current
IDSS1
IDSS2
IDSS3
VDS = 100V, VGS = 0
VDS = 80V, VGS = 0
VDS = 80V, VGS = 0,TC = +125
o
C
-
-
-
1
0.025
0.25
mA
Rated Avalanche Current
IAR
Time = 20
μ
s
-
100
A
Drain-Source On-State Volts
VDS(on)
VGS = 10V, ID = 41A
-
2.15
V
Drain-Source On Resistance
RDS(on)
VGS = 10V, ID = 26A
-
0.050
Turn-On Delay Time
td(on)
VDD = 50V, ID = 41A
Pulse Width = 3
μ
s
Period = 300
μ
s Rg = 10
0
≤
VGS
≤
10 (See Test Circuit)
-
100
ns
Rise Time
tr
-
700
Turn-Off Delay Time
td(off)
-
400
Fall Time
tf
-
300
Gate-Charge Threshold
QG(th)
VDD = 50V, ID = 41A
IGS1 = IGS2
0
≤
VGS
≤
20
4
16
nc
Gate-Charge On State
QG(on)s
94
376
Gate-Charge Total
QGM
182
728
Plateau Voltage
VGP
3
16
V
Gate-Charge Source
QGS
21
86
nc
Gate-Charge Drain
QGD
52
210
Diode Forward Voltage
VSD
ID = 41A, VGD = 0
0.6
1.8
V
Reverse Recovery Time
TT
I = 41A; di/dt = 100A/
μ
s
-
600
ns
Junction-To-Case
R
θ
jc
-
-
0.83
o
C/W
Junction-To-Ambient
R
θ
ja
Free Air Operation
-
48
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
V
DS
DUT
R
GS
0V
V
GS
= 12V
V
DD
R
L
t
P
V
GS
≤
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
50
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
FRE160D, FRE160R, FRE160H
相關PDF資料 |
PDF描述 |
|---|---|
| FRE160H | 41A, 100V, 0.050 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRE260D | 31A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRE260H | 31A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRE260R | 31A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRE264D | 23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FRE160H | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:41A, 100V, 0.050 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRE160R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:41A, 100V, 0.050 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRE1A2 | 制造商:BACO Controls Inc 功能描述: |
| FRE200 | 制造商:Electrolube 功能描述:FREEZER, 200ML |
| FRE260D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:31A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs |
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