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參數(shù)資料
| 型號(hào)： | FSX017LG |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | General Purpose GaAs FET |
| 中文描述： | 通用砷化鎵場效應(yīng)管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 76K |
| 代理商： | FSX017LG |
1
Edition 1.2
July 1999
FSX017LG
General Purpose GaAs FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
Ptot
Tstg
Tch
8
-5
220
-65 to +175
175
Note
V
V
mW
°
C
°
C
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°
C)
Note:
Mounted on Al2O3 board (30 x 30 x 0.65mm)
For reliable operation of this FET:
1. The drain - source operating voltage (VDS) should not exceed 4 volts.
2. The forward and reverse gate currents should not exceed 0.7 and -0.1 mA respectively with
gate resistance of 2000
.
3. The operating channel temperature (Tch) should not exceed 145
°
C.
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS
35
55
75
-
50
-
-0.7
-1.2
-1.7
-5
-
-
7.0
8.0
-
15.0
16.0
-
VDS = 3V, IDS = 2.7mA
VDS = 3V, IDS = 27mA
VDS = 3V, VGS = 0V
IGS = -2.7
μ
A
VDS = 4V
IDS
=
30mA
f = 12GHz
mA
mS
V
dB
dBm
V
gm
Vp
VGSO
P1dB
G1dB
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
G.C.P.: Gain Compression Point
CASE STYLE:
LG
Note: The RF parameters are measured on a lot basis by sample testing
at an AQL = 0.1%, Level-II inspection. Any lot failure shall be 100% retested.
Channel to Case
Thermal Resistance
-
300
400
°
C/W
Rth
DESCRIPTION
The FSX017LG is a general purpose GaAs FET designed for medium
power applications up to 12GHz. These devices have a wide dynamic
range and are suitable for use in medium power, wide band, linear drive
amplifiers.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FEATURES
Medium Power Output: P1dB= 16.0dBm (Typ.)@12.0GHz
High Power Gain: G1dB= 8.0dB (Typ.)@12.0GHz
Proven Reliability
Cost Effective Hermetic Microstrip Package
Tape and Reel Available
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FSX017X | GaAs FET & HEMT Chips |
| FSX027WF | General Purpose GaAs FET |
| FSX027X | GaAs FET & HEMT Chips |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSX017WF | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:Small Signal GaAs FETs, Medium Power, 11dB, 8GHz, 39mA, Bulk |
| FSX017X | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:GaAs FET & HEMT Chips |
| FSX017X/001 | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:GaAs FET Chip, Waffle4 |
| FSX027WF | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:Small Signal GaAs FETs, Medium Power, 10dB, 8GHz, 77mA, Bulk |
| FSX027X | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:GaAs FETs, Chip, X-band Amplifier, 10dB, 8GHz, 77mA, Waffle1 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:GaAs FETs, Chip, X-band Amplifier, 10dB, 8GHz, 77mA, Waffle3 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:GaAs FETs, Chip, X-band Amplifier, 10dB, 8GHz, 77mA, Waffle2 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:GaAs FETs, Chip, X-band Amplifier, 10dB, 8GHz, 77mA, Waffle4 |
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