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參數資料
| 型號： | FSX017X |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | GaAs FET & HEMT Chips |
| 中文描述： | 砷化鎵場效應管 |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 86K |
| 代理商： | FSX017X |
1
Edition 1.2
July 1999
FSX017X
GaAs FET & HEMT Chips
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Noise Figure
Associated Gain
Symbol
IDSS
gm
35
55
75
-
50
-
-0.7
-1.2
-1.7
-
2.5
-
-
10.5
-
-
21.5
21.5
-
-
-
-
20.5
15.0
11.0
-
-
-
-
-
7.5
120
-
-5.0
-
-
VDS = 3V, IDS = 2.7mA
VDS = 3V, IDS = 10mA
f = 8GHz
f = 4GHz
f = 8GHz
f = 12GHz
f = 4GHz
f = 8GHz
f = 12GHz
VDS = 8V,
IDS = 0.7 IDSS
VDS = 8V,
IDS = 0.7 IDSS
Channel to Case
G.C.P.: Gain Compression Point
VDS = 3V, IDS = 27mA
VDS = 3V, VGS = 0V
IGS = -2.7
μ
A
mA
mS
V
dB
dBm
dBm
dBm
dB
dB
dB
°
C/W
20.5
10.0
150
dB
V
Vp
VGSO
NF
Gas
Output Power at 1 dB G.C.P.
P1dB
Power Gain at 1 dB G.C.P.
G1dB
Thermal Resistance
Rth
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
Note:
RF parameter sample size 10pcs. criteria (accept/reject)=(2/3)
The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
12
-5
1.0
-65 to +175
175
Tc = 25
°
C
V
V
W
°
C
°
C
Ptot
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°
C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain - source operating voltage (VDS) should not exceed 8 volts.
2. The forward and reverse gate currents should not exceed 0.7 and -0.1 mA respectively with
gate resistance of 2000
.
3. The operating channel temperature (Tch) should not exceed 145
°
C.
FEATURES
Medium Power Output: P1dB=21.5dBm(Typ.)@8.0GHz
High Power Gain: G1dB=11dB(Typ.)@8.0GHz
Proven Reliability
DESCRIPTION
The FSX017X is a general purpose GaAs FET designed for medium
power applications up to 12GHz. These devices have a wide dynamic
range and are suitable for use in medium power, wide band, linear drive
amplifiers or oscillators.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
Source
Source
Drain
Gate
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相關代理商/技術參數 |
參數描述 |
|---|---|
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