參數(shù)資料
型號： FZ1200R33KF2C-B5
廠商： EUPEC
英文描述： SANYO IC 15-PIN SIP
中文描述： IGBT的- Wechselrichter / IGBT的逆變器
文件頁數(shù)： 2/7頁
文件大?。?/td> 253K
代理商： FZ1200R33KF2C-B5
2
Technische Information / technical information
FZ1200R33KF2C
IGBT-modules
IGBT-Module
prepared by: Jürgen Biermann
approved by: Christoph Lübke
date of publication: 3/18/2003
revision: 2.0
Vorlufige Daten
preliminary data
Diode-Wechselrichter / diode-inverter
Hchstzulssige Werte / maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
TY = 25°C
TY = -25°C
V￠
3300
3300
V
Dauergleichstrom
DC forward current
I
1200
A
Periodischer Spitzenstrom
repetitive peak forward current
t = 1 ms
I￠
2400
A
Grenzlastintegral
I2t - value
V = 0 V, t = 10 ms, TY = 125°C
I2t
500
kA2s
Spitzenverlustleistung
maximum power dissipation
TY = 125°C
P￠
2400
kW
Mindesteinschaltdauer
minimum turn-on time
tóò íò
10,0
μs
Charakteristische Werte / characteristic values
Durchlassspannung
forward voltage
min.
typ.
2,80
2,80
max.
3,50
3,50
I = 1200 A, V = 0 V, TY = 25°C
I = 1200 A, V = 0 V, TY = 125°C
V
V
V
Rückstromspitze
peak reverse recovery current
I = 1200 A, - di/dt = 6800 A/μs
V = 1800 V, V = -15 V, TY = 25°C
V = 1800 V, V = -15 V, TY = 125°C
I￠
1700
2000
A
A
Sperrverzgerungsladung
recovered charge
I = 1200 A, -di/dt = 6800 A/μs
V = 1800 V, V = -15 V, TY = 25°C
V = 1800 V, V = -15 V, TY = 125°C
Q
710
1300
μC
μC
Abschaltenergie pro Puls
reverse recovery energy
I = 1200 A, -di/dt = 6800 A/μs
V = 1800 V, V = -15 V, TY = 25°C
V = 1800 V, V = -15 V, TY = 125°C
Etê
735
1550
mJ
mJ
Innerer Wrmewiderstand
thermal resistance, junction to case
pro Diode
per diode
Rúì
17,0 K/kW
übergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro Diode / per diode
eèùút = 1 W/(m·K) / etèùt = 1 W/(m·K)
Rúì
12,0
K/kW
相關(guān)PDF資料
PDF描述
FZ1200R33KF2C IGBT-Wechselrichter / IGBT-inverter
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FZ1200R33KL2 制造商:EUPEC 制造商全稱:EUPEC 功能描述:Hochstzulassige Werte / Maximum rated values
FZ1200R33KL2C 功能描述:IGBT 模塊 N-CH 3.3KV 2.3KA RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FZ1200R33KL2C_B5 功能描述:IGBT 模塊 N-CH 3.3KV 2.3KA RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FZ1200R33KL2C-B5 制造商:EUPEC 制造商全稱:EUPEC 功能描述:IGBT-Wechselrichter / IGBT-inverter
FZ1200R45HL3 制造商:Infineon Technologies AG 功能描述:
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