參數(shù)資料
型號(hào): GS832236B-225
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 1M X 36 CACHE SRAM, 7 ns, PBGA119
封裝: 14 X 22 MM, 1.27 MM PITCH, FBGA-119
文件頁數(shù): 7/46頁
文件大小: 1592K
代理商: GS832236B-225
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.07a 12/2007
15/46
2001, GSI Technology
Simplified State Diagram
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
WR
R
WR
X
Simple
Synchronous
Operation
Simple
Burst
Synchronou
sOperation
CR
R
CW
CR
Notes:
1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
2. The upper portion of the diagram assumes active use of only the Enable (E1) and Write (BA, BB, BC, BD, BW, and GW) control inputs, and
that ADSP is tied high and ADSC is tied low.
3. The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs and
assumes ADSP is tied high and ADV is tied low.
相關(guān)PDF資料
PDF描述
GS832236E-225IV 1M X 36 CACHE SRAM, 7 ns, PBGA165
GS8322Z18E-225VT 2M X 18 ZBT SRAM, 7 ns, PBGA165
GS8322ZV72GC-150IT 512K X 72 ZBT SRAM, 8.5 ns, PBGA209
GS8322ZV36GB-200T 1M X 36 ZBT SRAM, 7.5 ns, PBGA119
GS8322ZV36GE-225IT 1M X 36 ZBT SRAM, 7 ns, PBGA165
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