參數(shù)資料
型號: GS832236B-225
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 1M X 36 CACHE SRAM, 7 ns, PBGA119
封裝: 14 X 22 MM, 1.27 MM PITCH, FBGA-119
文件頁數(shù): 8/46頁
文件大小: 1592K
代理商: GS832236B-225
GS832218(B/E)/GS832236(B/E)/GS832272(C)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.07a 12/2007
16/46
2001, GSI Technology
Simplified State Diagram with G
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
WR
R
W
R
X
CR
R
CW
CR
W
CW
W
CW
Notes:
1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
2. Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
3. Transitions shown in grey tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
相關PDF資料
PDF描述
GS832236E-225IV 1M X 36 CACHE SRAM, 7 ns, PBGA165
GS8322Z18E-225VT 2M X 18 ZBT SRAM, 7 ns, PBGA165
GS8322ZV72GC-150IT 512K X 72 ZBT SRAM, 8.5 ns, PBGA209
GS8322ZV36GB-200T 1M X 36 ZBT SRAM, 7.5 ns, PBGA119
GS8322ZV36GE-225IT 1M X 36 ZBT SRAM, 7 ns, PBGA165
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