參數(shù)資料
型號(hào)： GS8641E18F-200IT
廠(chǎng)商： GSI TECHNOLOGY
元件分類(lèi)： SRAM
英文描述： 4M X 18 CACHE SRAM, 7.5 ns, PBGA165
封裝： 1 MM PITCH, BGA-165
文件頁(yè)數(shù)： 5/31頁(yè)
文件大?。?/td> 769K
代理商： GS8641E18F-200IT
GS8641E18/32/36F-300/250/200/167
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 3/2005
13/31
2004, GSI Technology
VDDQ3 Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
VDD Input High Voltage
VIH
2.0
—
VDD + 0.3
V1
VDD Input Low Voltage
VIL
–0.3
—
0.8
V
1
VDDQ I/O Input High Voltage
VIHQ
2.0
—
VDDQ + 0.3
V1,3
VDDQ I/O Input Low Voltage
VILQ
–0.3
—
0.8
V
1,3
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
VDDQ2 Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
VDD Input High Voltage
VIH
0.6*VDD
—
VDD + 0.3
V1
VDD Input Low Voltage
VIL
–0.3
—
0.3*VDD
V1
VDDQ I/O Input High Voltage
VIHQ
0.6*VDD
—
VDDQ + 0.3
V1,3
VDDQ I/O Input Low Voltage
VILQ
–0.3
—
0.3*VDD
V1,3
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Ambient Temperature (Commercial Range Versions)
TA
025
70
°C2
Ambient Temperature (Industrial Range Versions)
TA
–40
25
85
°C2
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
相關(guān)PDF資料
PDF描述
GS8641Z18GF-167T 4M X 18 ZBT SRAM, 8 ns, PBGA165
GS8642V18E-250 4M X 18 CACHE SRAM, 6.5 ns, PBGA165
GS8642ZV36GB-167IT 2M X 36 ZBT SRAM, 8 ns, PBGA119
GS864418GE-225IV 4M X 18 CACHE SRAM, 6.5 ns, PBGA165
GS8644V18GE-150 4M X 18 CACHE SRAM, 7.5 ns, PBGA165
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8641E18GF-167 制造商:GSI Technology 功能描述:4MBX18, DCD PIPELINE/FLOW THROUGH,PB-FREE,165 BGA,167MHZ,8NS - Trays
GS8641E18GF-250 制造商:GSI Technology 功能描述:4MBX18,DCD PIPELINE/FLOWTHROUGH,PB-FREE,165 BGA,250MHZ,6.5NS - Trays
GS8641E18GF-300 制造商:GSI Technology 功能描述:4MBX18,DCD PIPELINE/FLOWTHROUGH,PB-FREE,165 BGA,300MHZ,5.5NS - Trays
GS8641E32GF-167 制造商:GSI Technology 功能描述:2MBX32,DCD PIPELINE/FLOWTHROUGH,PB-FREE,165 BGA,300MHZ,5.5NS - Trays
GS8641E32GF-250 制造商:GSI Technology 功能描述:2MBX32,DCD PIPELINE/FLOWTHROUGH,PB-FREE,165 BGA,250MHZ,6.5NS - Trays
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