參數(shù)資料
型號: GS8641E18F-200IT
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 4M X 18 CACHE SRAM, 7.5 ns, PBGA165
封裝: 1 MM PITCH, BGA-165
文件頁數(shù): 9/31頁
文件大?。?/td> 769K
代理商: GS8641E18F-200IT
GS8641E18/32/36F-300/250/200/167
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 3/2005
17/31
2004, GSI Technology
Notes:
1. These parameters are sampled and are not 100% tested.
2. ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
AC Electrical Characteristics
Parameter
Symbol
-300
-250
-200
-167
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Pipeline
Clock Cycle Time
tKC
3.3
4.0
5.0
6.0
ns
Clock to Output Valid
tKQ
2.3
2.5
3.0
3.5
ns
Clock to Output Invalid
tKQX
1.5
1.5
1.5
1.5
ns
Clock to Output in Low-Z
tLZ1
1.5
1.5
1.5
1.5
ns
Setup time
tS
1.1
1.2
1.4
1.5
ns
Hold time
tH
0.1
0.2
0.4
0.5
ns
Flow
Through
Clock Cycle Time
tKC
5.5
6.5
7.5
8.0
ns
Clock to Output Valid
tKQ
5.5
6.5
7.5
8.0
ns
Clock to Output Invalid
tKQX
3.0
3.0
3.0
3.0
ns
Clock to Output in Low-Z
tLZ1
3.0
3.0
3.0
3.0
ns
Setup time
tS
1.5
1.5
1.5
1.5
ns
Hold time
tH
0.5
0.5
0.5
0.5
ns
Clock HIGH Time
tKH
1.0
1.3
1.3
1.3
ns
Clock LOW Time
tKL
1.2
1.5
1.5
1.5
ns
Clock to Output in
High-Z
tHZ1
1.5
2.3
1.5
2.5
1.5
3.0
1.5
3.0
ns
G to Output Valid
tOE
2.3
2.5
3.0
3.5
ns
G to output in Low-Z
tOLZ1
0
0
0
0
ns
G to output in High-Z
tOHZ1
2.3
2.5
3.0
3.0
ns
ZZ setup time
tZZS2
5
5
5
5
ns
ZZ hold time
tZZH2
1
1
1
1
ns
ZZ recovery
tZZR
20
20
20
20
ns
相關PDF資料
PDF描述
GS8641Z18GF-167T 4M X 18 ZBT SRAM, 8 ns, PBGA165
GS8642V18E-250 4M X 18 CACHE SRAM, 6.5 ns, PBGA165
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GS864418GE-225IV 4M X 18 CACHE SRAM, 6.5 ns, PBGA165
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