- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄296050 > GT25C32-2UDLI-TR (GIANTEC SEMICONDUCTOR INC) 4K X 8 SPI BUS SERIAL EEPROM, DSO8 PDF資料下載
參數(shù)資料
| 型號： | GT25C32-2UDLI-TR |
| 廠商： | GIANTEC SEMICONDUCTOR INC |
| 元件分類： | PROM |
| 英文描述： | 4K X 8 SPI BUS SERIAL EEPROM, DSO8 |
| 封裝： | 2 X 3 MM, GREEN, MO-229, DFN-8 |
| 文件頁數(shù)： | 15/18頁 |
| 文件大小： | 781K |
| 代理商： | GT25C32-2UDLI-TR |
6
Integrated Silicon Solution, Inc. — www.issi.com
Advanced Information Rev. 00C
07/16/09
IS25C32B
Table 5. Address Key
Name
IS25C32B
A
N
A
11-A0
Don't
A
15-A12
Care Bits
WRITE STATUS REgISTER (WRSR)
This instruction lets the user choose a Block Protection
setting, and set or reset the WPEN bit. The values of
the other data bits incorporated into WRSR can be 0
or 1, and are not stored in the Status Register. WRSR
will be ignored unless both the following are true: a)
WEN = 1, due to a prior WREN instruction; and b)
Hardware Write Protection is not enabled. (See Table
4 for details). Except for the RDY status, the values in
the Status Register remain unchanged until the mo-
ment when the write cycle is complete and the register
is updated. Note: WPEN can be changed from 1 to 0
only if WP is already set High. Once completed, WEN
is reset for complete chip write protection. (See Figure
5 for timing).
READ DATA (READ)
This instruction begins with the op-code and the 16-
bit address, and causes the selected data byte to be
shifted out on SO. Following this first data byte, addi-
tional sequential bytes are output. If the data byte in the
highest address is output, the address rolls-over to the
lowest address in the array, and the output could loop
indefinitely. At any time, a rising CS signal completes
the operation. (See Figure 6 for timing).
WRITE DATA (WRITE)
The WRITE instruction begins with the op-code, the
16-bit address of the first byte to be modified, and the
first data byte. Additional data bytes may be written se-
quentially to the array after the first byte. Each WRITE
instruction can affect the contents of a 32 byte page,
but no more. The page begins at address XXXXXXXX
XXX00000, and ends with XXXXXXXX XXX11111. If
the last byte of the page is input, the address rolls over
to the beginning of the same page. More than 32 data
bytes can be input during the same instruction, but upon
a completed write cycle, a page would only contain the
last 32 bytes.
The region of the array defined within Block Protection
cannot be modified as long as that block configuration
is selected. The region of the array outside the Block
Protection can only be modified if Write Enable (WEN)
is set to 1. Therefore, it may be necessary that a WREN
instruction occur prior to WRITE. Hardware Write Pro-
tection has no affect on the memory array. Once Write
is completed, WEN is reset for complete chip write
protection. (See Figure 7 for timing).
Table 4. Write Protection
WPEN
WP
Hardware Write
WEN
Inside Block
Outside Block
Status Register
Protection
(WPEN, BP1, BP0)
0
X
Not Enabled
0
Read-only
0
X
Not Enabled
1
Read-only
Unprotected
1
0
Enabled
0
Read-only
1
0
Enabled
1
Read-only
Unprotected
Read-only
X
1
Not Enabled
0
Read-only
X
1
Not Enabled
1
Read-only
Unprotected
Note: X = Don't care bit.
相關PDF資料 |
PDF描述 |
|---|---|
| GT3020/L2C-B45562C4CB2/2T | SINGLE COLOR LED, COOL WHITE, 2.7 mm |
| GTXO-72T/FCK19.20MHZ | TCXO, CLIPPED SINE OUTPUT, 19.2 MHz |
| GTXO-72T/FCL19.80MHZ | TCXO, CLIPPED SINE OUTPUT, 19.8 MHz |
| GTXO-72T/FCP20.0MHZ | TCXO, CLIPPED SINE OUTPUT, 20 MHz |
| GTXO-72T/FRM16.80MHZ | TCXO, CLIPPED SINE OUTPUT, 16.8 MHz |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| GT25G101 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SILICON N−CHANNEL IGBT STROBE FLASH APPLICATIONS |
| GT25G101(Q) | 功能描述:IGBT 晶體管 IGBT 400V 170A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| GT25G101(SM) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 400V V(BR)CES | 25A I(C) | TO-263VAR |
| GT25G101_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SILICON N−CHANNEL IGBT STROBE FLASH APPLICATIONS |
| GT25G101SM | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL IGBT (STROBE FLASH APPLICATIONS) |
發(fā)布緊急采購，3分鐘左右您將得到回復。