參數(shù)資料
型號: H7N0307AB
廠商: Renesas Technology Corp.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場效應晶體管高速電源開關
文件頁數(shù): 4/12頁
文件大?。?/td> 120K
代理商: H7N0307AB
H7N0307AB
Rev.1, Aug. 2002, page 2 of 2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
θ
ch-c
Tch
30
V
Gate to source voltage
±20
V
Drain current
60
A
Drain peak current
Note 1
240
A
Body-drain diode reverse drain current
60
A
Channel dissipation
Note 2
90
W
Channel to Case Thermal Impedance
1.39
°C/W
Channel temperature
150
°C
Storage temperature
Notes: 1. PW
10
μ
s, duty cycle
1 %
2. Value at Tc = 25°C
Tstg
–55 to +150
°C
相關PDF資料
PDF描述
H7N0308AB Datasheet|ADE-208-1569B|AUG.07.02|121K
H7N0310LD Silicon N Channel MOS FET High Speed Power Switching
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H7N0307AB_05 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
H7N0307AB-E 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 60A 3-Pin(3+Tab) TO-220AB
H7N0307LD 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
H7N0307LD-E 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 60A 3-Pin(3+Tab) LDPAK(L)