參數(shù)資料
型號: H7N0307AB
廠商: Renesas Technology Corp.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場效應(yīng)晶體管高速電源開關(guān)
文件頁數(shù): 9/12頁
文件大?。?/td> 120K
代理商: H7N0307AB
H7N0307AB
Rev.1, Aug. 2002, page 7 of 7
Pulse Width PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width
Source to Drain Voltage V (V)
R
D
N
s
γ
100
80
60
40
20
0
0.4
0.8
1.2
1.6
2.0
Reverse Drain Current vs.
Souece to Drain Voltage
Pulse Test
5 V
V = 0
10 V
3
1
0.3
0.1
0.03
0.01
10
μ
100
μ
1 m
10 m
100 m
1
10
Tc = 25
°
C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
DM
P
PW
T
D =T
θ
ch
c(t) =
γ
s (t)
θ
ch
c
θ
ch
c = 1.38
°
C/ W, Tc = 25
°
C
相關(guān)PDF資料
PDF描述
H7N0308AB Datasheet|ADE-208-1569B|AUG.07.02|121K
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
H7N0307AB_05 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
H7N0307AB-E 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 60A 3-Pin(3+Tab) TO-220AB
H7N0307LD 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
H7N0307LD-E 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 60A 3-Pin(3+Tab) LDPAK(L)