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參數(shù)資料
| 型號(hào)： | H7N0307AB |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管高速電源開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 7/12頁(yè) |
| 文件大?。?/td> | 120K |
| 代理商： | H7N0307AB |
H7N0307AB
Rev.1, Aug. 2002, page 5 of 5
Gate to Source Voltage V (V)
D
D
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current I (A)
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
Case Temperature Tc (
°
C)
S
Static Drain to Source on State Resistance
vs. Temperature
20
F
Drain Current I (A)
Forward Transfer Admittance vs.
Drain Current
0.20
0.16
0.12
0.08
0.04
0
4
8
12
16
20
20
10
2
5
1
0.1
0.5
2
5
20
50
16
12
8
4
-40
0
40
80
120
160
0
Pulse Test
I = 10 A
2 A
5 A
1
10
100
0.2
50
V = 4.5 V
10 V
R
I = 2 A, 5 A, 10 A
D
2 A, 5 A, 10 A
V = 4.5 V
10 V
Pulse Test
3
30
0.1
1
10
100
0.3
10
100
30
1
0.3
3
0.1
Tc = -25
°
C
V = 10 V
Pulse Test
75
°
C
25
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| H7N0308AB | Datasheet|ADE-208-1569B|AUG.07.02|121K |
| H7N0310LD | Silicon N Channel MOS FET High Speed Power Switching |
| H7N0310LM | Silicon N Channel MOS FET High Speed Power Switching |
| H7N0310LS | Silicon N Channel MOS FET High Speed Power Switching |
| H7N0312AB | Silicon N Channel MOS FET High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H7N0307AB_05 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H7N0307AB-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 60A 3-Pin(3+Tab) TO-220AB |
| H7N0307LD | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H7N0307LD-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 60A 3-Pin(3+Tab) LDPAK(L) |
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