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參數(shù)資料
| 型號(hào)： | H7N0307AB |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管高速電源開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大小： | 120K |
| 代理商： | H7N0307AB |
H7N0307AB
Rev.1, Aug. 2002, page 3 of 3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Gate to source leak current
30
—
—
V
I
D
= 10 mA, V
GS
= 0
I
G
= ±100
μ
A, V
DS
= 0
V
GS
= ±16 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 30 A, V
GS
= 10 V
I
D
= 30 A, V
GS
= 4.5 V
I
D
= 30 A, V
DS
= 10 V
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
±20
—
—
μ
A
μ
A
V
m
m
S
I
GSS
I
DSS
V
GS(off)
R
DS(on)
—
—
±10
Zero gate voltage drain current
—
—
10
Gate to source cutoff voltage
1.0
—
2.5
Note 1
Static drain to source on state
—
4.6
5.8
Note 1
resistance
—
8.0
11.5
Note 1
Forward transfer admittance
|y
fs
|
Ciss
40
65
—
Note 1
Input capacitance
—
2500
—
pF
Output capacitance
Coss
—
650
—
pF
Reverse transfer capacitance
Crss
—
350
—
pF
Total gate charge
Qg
—
40
—
nc
V
DD
= 10 V
V
GS
= 10 V
I
D
= 60 A
V
GS
= 10 V, I
D
= 30 A
R
L
=0.33
R
g
= 4.7
Gate to source charge
Qgs
—
7
—
nc
Gate to drain charge
Qgd
—
8
—
nc
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
20
—
ns
Rise time
—
300
—
ns
Turn-off delay time
—
70
—
ns
Fall time
—
20
—
ns
Body
–
drain diode forward voltage
—
0.92
—
V
I
F
= 60 A, V
GS
= 0
I
= 60 A, V
= 0
diF/ dt = 50 A/
μ
s
Body
–
drain diode reverse recovery
time
—
60
—
ns
Notes: 1. Pulse test
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PDF描述 |
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| H7N0308AB | Datasheet|ADE-208-1569B|AUG.07.02|121K |
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| H7N0310LM | Silicon N Channel MOS FET High Speed Power Switching |
| H7N0310LS | Silicon N Channel MOS FET High Speed Power Switching |
| H7N0312AB | Silicon N Channel MOS FET High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H7N0307AB_05 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H7N0307AB-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 60A 3-Pin(3+Tab) TO-220AB |
| H7N0307LD | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H7N0307LD-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 60A 3-Pin(3+Tab) LDPAK(L) |
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