參數(shù)資料
型號: H7N0608LS
廠商: Renesas Technology Corp.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場效應晶體管高速電源開關
文件頁數(shù): 3/12頁
文件大小: 128K
代理商: H7N0608LS
H7N0608LD, H7N0608LS, H7N0608LM
Rev.1.00, Oct.30.2003, page 3 of 11
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown Voltage V
(BR)GSS
±
20
±
10
10
V
μ
A
μ
A
V
m
m
S
I
G
=
±
100
μ
A, V
DS
= 0
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
Note1
I
D
= 35 A, V
GS
= 10 V
Note1
I
D
= 35 A, V
GS
= 4.5 V
Note1
I
D
= 35 A, V
GS
= 10 V
Note1
Gate to source leak current
I
GSS
Zero gate voltage drain current
I
DSS
Gate to source cutoff voltage
V
GS(off)
1.5
2.5
Static drain to source on state
R
DS(on)
6.0
8.0
resistance
8.0
12
Forward transfer admittance
|y
fs
|
45
75
Input capacitance
Ciss
6200
pF
V
DS
= 10 V
Output capacitance
Coss
680
pF
V
GS
= 0
Reverse transfer capacitance
Crss
350
pF
f = 1 MHz
Total gate charge
Qg
100
nC
V
DD
= 25 V
Gate to source charge
Qgs
20
nC
V
GS
= 10 V
Gate to drain charge
Qgd
20
nC
I
D
= 70 A
Turn-on delay time
t
d(on)
45
ns
V
GS
= 10 V, I
D
= 35 A
R
L
= 0.86
Rg = 4.7
Rise time
t
r
220
ns
Turn-off delay time
t
d(off)
125
ns
Fall time
t
f
35
ns
Body–drain diode forward voltage V
DF
0.94
V
I
F
= 70 A, V
GS
= 0
Body–drain diode reverse
recovery time
Notes: 1. Pulse test
t
rr
40
ns
I
F
= 70 A, V
GS
= 0
diF/dt = 100 A/
μ
s
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H7N1004LD Silicon N-Channel MOSFET High-Speed Power Switching
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H7N1004LM Silicon N-Channel MOSFET High-Speed Power Switching
H7N1004LS Silicon N-Channel MOSFET High-Speed Power Switching
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