- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371760 > H7N0608LS (Renesas Technology Corp.) Silicon N Channel MOS FET High Speed Power Switching PDF資料下載
參數(shù)資料
| 型號(hào)： | H7N0608LS |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 128K |
| 代理商： | H7N0608LS |
H7N0608LD, H7N0608LS, H7N0608LM
Rev.1.00, Oct.30.2003, page 4 of 11
Main Characteristics
160
120
80
0
50
100
150
200
0.1
0.3
1
3
10
30
100
100
80
60
40
20
0
2
4
6
8
10
1000
300
100
30
10
1
0.3
0.03
0.01
0.1
3
Ta = 25
°
C
10
μ
s
100
μ
s
1m
40
4.5 V
4.0 V
3.6 V
10 V
100
80
60
40
20
0
2
4
6
8
10
–40
°
C
25
°
C
Tc = 150
°
C
V
DS
= 10 V
Pulse Test
V
GS
= 3.2 V
DC Operation
(Tc = 25
°
C)
PW = 10 ms
(1 shot)
Pulse Test
C
Case Temperature Tc (
°
C)
Power vs. Temperature Derating
Drain to Source Voltage V
DS
(V)
D
D
Maximum Safe Operation Area
Gate to Source Voltage V
GS
(V)
Typical Transfer Characteristics
D
D
Drain to Source Voltage V
DS
(V)
D
D
Typical Output Characteristics
Operation in
this area is
limited by R
DS(on)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| H7N1004LD | Silicon N-Channel MOSFET High-Speed Power Switching |
| H7N1004M | Silicon N-Channel MOSFET High-Speed Power Switching |
| H7N1004LM | Silicon N-Channel MOSFET High-Speed Power Switching |
| H7N1004LS | Silicon N-Channel MOSFET High-Speed Power Switching |
| H8-300 | In-Circuit Emulator for Renesas H8/300 and H8/500 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H7N0608LS-E | 制造商:Renesas Electronics Corporation 功能描述: |
| H7N1002AB | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H7N1002LD | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H7N1002LD_09 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。