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參數(shù)資料
| 型號： | H7N0608LS |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 128K |
| 代理商： | H7N0608LS |
H7N0608LD, H7N0608LS, H7N0608LM
Rev.1.00, Oct.30.2003, page 6 of 11
1
0.1
0.3
3
10
30
100
0
10
20
30
40
50
100
1000
300
100
80
60
40
20
0
20
16
12
8
4
40
Gate Charge Qg (nc)
80
120
160
200
0
1000
100
300
30
10
1
0.1
3
0.3
3
10
100
1000
100
300
30
3
10
1
30
30
1
10
V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
I
D
= 85 A
V
GS
V
DS
V
GS
= 10 V, V
DD
= 30 V
PW = 5
μ
s, duty < 1 %
Rg = 4.7
tr
tr
td(on)
td(off)
tf
tf
3000
10000
di / dt = 100 A / μs
V
GS
= 0, Ta = 25
°
C
V
DD
= 50 V
25 V
10 V
V
DD
= 50 V
25 V
10 V
Reverse Drain Current I
DR
(A)
R
Body-Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
D
D
G
G
Dynamic Input Characteristics
S
Drain Current I
D
(A)
Switching Characteristics
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| H7N1004LD | Silicon N-Channel MOSFET High-Speed Power Switching |
| H7N1004M | Silicon N-Channel MOSFET High-Speed Power Switching |
| H7N1004LM | Silicon N-Channel MOSFET High-Speed Power Switching |
| H7N1004LS | Silicon N-Channel MOSFET High-Speed Power Switching |
| H8-300 | In-Circuit Emulator for Renesas H8/300 and H8/500 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H7N0608LS-E | 制造商:Renesas Electronics Corporation 功能描述: |
| H7N1002AB | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H7N1002LD | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H7N1002LD_09 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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