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參數(shù)資料
| 型號： | HAF2012 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Unidirectional ESD protection for transient voltage suppression, SOD323 (UMD2; I-IEIA; URP), Tape reel SMD |
| 中文描述： | 硅?通道場效應(yīng)晶體管系列電源開關(guān) |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 128K |
| 代理商： | HAF2012 |
HAF2012(L), HAF2012(S)
REJ03G1139-0400 Rev.4.00 Jul 13, 2007
Page 5 of 9
0.10
–40
0
40
80
120
160
Case Temperature Tc (°C)
0
0.02
0.04
0.06
0.08
S
D
)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
10 V
V
GS
= 4 V
I
D
= 20 A
I
D
= 20 A
5 A, 10 A
10 A
5 A
F
Forward Transfer Admittance vs.
Drain Current
Drain Current I
D
(A)
100
50
10
20
5
1
0.5
2
1
2
5
10
20
50
Tc = –25°C
75°C
V
DS
= 10 V
Pulse Test
25°C
Reverse Drain Current I
DR
(A)
R
Body-Drain Diode Reverse
Recovery Time
0.5
1
2
5
10
20
50
1000
500
200
50
100
20
10
di / dt = 50 A /
μ
s
V
GS
= 0, Ta = 25°C
0
10
20
30
40
50
C
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
300
100
30
10
Coss
V
GS
= 0
f = 1 MHz
50
0
Source to Drain Voltage V
SD
(V)
R
D
0
10
20
30
40
Reverse Drain Current vs.
Source to Drain Voltage
0.4
0.8
1.2
1.6
2.0
0 V
V
GS
= 5 V
100
50
20
5
10
2
1
0.1
0.2
0.5
2
10
1
5
20
50
Drain Current I
D
(A)
S
μ
s
Switching Characteristics
tf
tr
td(off)
td(on)
Pulse Test
V
GS
= 5 V, V
DD
= 30 V
PW = 300
μ
s, duty
≤
1 %
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAF2012(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-262VAR |
| HAF2012-90L-E | 制造商:Renesas Electronics Corporation 功能描述: |
| HAF2012-90STL-E | 制造商:Renesas Electronics Corporation 功能描述:Cut Tape |
| HAF2012L | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET Series Power Switching |
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