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參數(shù)資料
| 型號(hào)： | HAF2012 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Unidirectional ESD protection for transient voltage suppression, SOD323 (UMD2; I-IEIA; URP), Tape reel SMD |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管系列電源開關(guān) |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大?。?/td> | 128K |
| 代理商： | HAF2012 |
HAF2012(L), HAF2012(S)
REJ03G1139-0400 Rev.4.00 Jul 13, 2007
Page 4 of 9
Main Characteristics
C
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V
DS
(V)
D
D
Typical Output Characteristics
Gate to Source Voltage V
GS
(V)
D
D
Typical Transfer Characteristics
50
0
10
20
30
40
0
2
4
6
8
10
50
0
10
20
30
40
0
1
2
3
4
5
80
0
20
40
60
0
50
100
150
200
V
DS
= 10 V
Pulse Test
10 V
8 V
4 V
5 V
6 V
3.5 V
V
GS
= 3 V
Pulse Test
Drain to Source Voltage V
DS
(V)
D
D
Maximum Safe Operation Area
Gate to Source Voltage V
GS
(V)
D
D
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
2.0
0
0.4
0.8
1.2
1.6
0
2
4
6
8
10
Pulse Test
I
D
= 20 A
5 A
10 A
Drain Current I
D
(A)
D
D
)
Static Drain to Source on State Resistance
vs. Drain Current
0.1
0.05
0.02
0.01
5
20
50
1
10
100 200
2
0.5
0.2
V
GS
= 4 V
10 V
Pulse Test
75°C
Tc = –25°C
25°C
500
100
200
20
50
10
2
5
1
0.5
0.3
0.3 0.5
1
2
5
10
20
50
100
Ta = 25
°
C
20
μ
s
100
μ
s
PW=10ms
DCOperaion(Tc=25
°
C)
Operation in this area
is limited by R
DS (on)
Thermal shut down
Operation area
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAF2012(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-262VAR |
| HAF2012-90L-E | 制造商:Renesas Electronics Corporation 功能描述: |
| HAF2012-90STL-E | 制造商:Renesas Electronics Corporation 功能描述:Cut Tape |
| HAF2012L | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET Series Power Switching |
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