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參數(shù)資料
| 型號： | HAF2012 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Unidirectional ESD protection for transient voltage suppression, SOD323 (UMD2; I-IEIA; URP), Tape reel SMD |
| 中文描述： | 硅?通道場效應(yīng)晶體管系列電源開關(guān) |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 128K |
| 代理商： | HAF2012 |
HAF2012(L), HAF2012(S)
REJ03G1139-0400 Rev.4.00 Jul 13, 2007
Page 3 of 9
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
I
D1
I
D2
V
(BR) DSS
V
(BR) GSS
V
(BR) GSS
I
GSS1
I
GSS2
I
GSS3
I
GSS4
I
GS (op) 1
I
GS (op) 2
I
DSS
V
GS (off)
R
DS (on)
R
DS (on)
|y
fs
|
Coss
Min
10
—
60
16
–2.8
—
—
—
—
—
—
—
1.0
—
—
6
—
Typ
—
—
—
—
—
—
—
—
—
0.8
0.35
—
—
50
30
12
630
Max
—
10
—
—
—
100
50
1
–100
—
—
250
2.25
65
43
—
—
Unit
A
mA
V
V
V
μ
A
μ
A
μ
A
μ
A
mA
mA
μ
A
V
m
m
S
pF
Test Conditions
V
GS
= 3.5 V, V
DS
= 2 V
V
GS
= 1.2 V, V
DS
= 2 V
I
D
= 10 mA, V
GS
= 0
I
G
= 100
μ
A, V
DS
= 0
I
G
= –100
μ
A, V
DS
= 0
V
GS
= 8 V, V
DS
= 0
V
GS
= 3.5 V, V
DS
= 0
V
GS
= 1.2 V, V
DS
= 0
V
GS
= –2.4 V, V
DS
= 0
V
GS
= 8 V, V
DS
= 0
V
GS
= 3.5 V, V
DS
= 0
V
DS
= 50 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 10 A, V
GS
= 4 V
Note 3
I
D
= 10 A, V
GS
= 10 V
Note 3
I
D
= 10 A, V
DS
= 10 V
Note 3
V
DS
= 10 V, V
GS
= 0
f = 1 MHz
I
D
= 5 A
V
GS
= 5 V
R
L
= 6
Drain current
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Output capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
t
d (on)
t
r
t
d (off)
t
f
V
DF
t
rr
—
—
—
—
—
—
7.5
29
34
26
1.0
110
—
—
—
—
—
—
μ
s
μ
s
μ
s
μ
s
V
ns
I
F
= 20 A, V
GS
= 0
I
F
= 20 A, V
GS
= 0
di
F
/dt = 50 A/
μ
s
V
GS
= 5 V, V
DD
= 12 V
V
GS
= 5 V, V
DD
= 24 V
t
os1
t
os2
—
—
1.8
0.7
—
—
ms
ms
Over load shut down operation time
Note4
Notes: 3. Pulse test
4. Including the junction temperature rise of the over loaded condition.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAF2012(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-262VAR |
| HAF2012-90L-E | 制造商:Renesas Electronics Corporation 功能描述: |
| HAF2012-90STL-E | 制造商:Renesas Electronics Corporation 功能描述:Cut Tape |
| HAF2012L | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET Series Power Switching |
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