參數(shù)資料
型號： HM-65642883
廠商： Intersil Corporation
英文描述： 8K x 8 Asynchronous CMOS Static RAM
中文描述： 8K的× 8異步的CMOS靜態(tài)RAM
文件頁數(shù)： 2/9頁
文件大?。?/td> 77K
代理商： HM-65642883
6-221
Absolute Maximum Ratings
Thermal Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7.0V
Input or Output Voltage Applied for all Grades. . . . . . .GND -0.3V to
VCC +0.3V
Typical Derating Factor. . . . . . . . . . . . 5mA/MHz Increase in ICCOP
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance (Typical)
CERDIP Package . . . . . . . . . . . . . . . .
CLCC Package . . . . . . . . . . . . . . . . . .
Maximum Storage Temperature Range . . . . . . . . .-65
o
C to +150
o
C
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . .+175
o
C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . .+300
o
C
θ
JA
θ
JC
8
o
C/W
10
o
C/W
45
o
C/W
55
o
C/W
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101,000 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range. . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +0.8V
Input High Voltage. . . . . . . . . . . . . . . . . . . . . . .+2.2V to VCC +0.3V
Data Retention Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . 2.0V
Input Rise and Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . .40ns Max.
TABLE 1. HM-65642/883 DC ELECTRICAL PERFORMANCE SPECIFICATIONS
Device Guaranteed and 100% Tested
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
High Level Output
Voltage
VOH 1
VCC = 4.5V, IO = -1.0mA
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
2.4
-
V
Low Level Output
Voltage
VOL
VCC = 4.5V, IO = 4.0mA
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
0.4
V
High Impedance
Output Leakage
Current
IIOZ
HM-65642B/883, HM-65642/883
VCC = 5.5V, G = 2.2V,
VI/O = GND or VCC
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-1.0
+1.0
μ
A
HM-65642C/883
VCC = 5.5V, G = 2.2V,
VI/O = GND or VCC
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-2.0
+2.0
μ
A
Input Leakage
Current
II
HM-65642B/883, HM-65642/883
VCC = 5.5V, VI = GND or VCC
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-1.0
+1.0
μ
A
HM-65642C/883
VCC = 5.5V, VI = GND or VCC
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-2.0
+2.0
μ
A
Standby Supply
Current
ICCSB1
HM-65642B/883
VCC = 5.5V, E1 = VCC -0.3V or
E2 = GND +0.3V
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
100
μ
A
HM-65642/883
VCC = 5.5V, E1 = VCC -0.3V or
E2 = GND +0.3V
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
250
μ
A
HM-65642C/883
VCC = 5.5V, E1 = VCC -0.3V or
E2 = GND +0.3V
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
400
μ
A
Standby Supply
Current
ICCSB
VCC = 5.5V, IO = 0mA, E1 = 2.2V or
E2 = 0.8V
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
5
mA
Enable Supply
Current
ICCEN
VCC = 5.5V, IO = 0mA, E1 =0.8V,
E2 = 2.2V
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
5
mA
Operating Supply
Current
ICCOP
VCC = 5.5V, G = 5.5V, (Note 2),
f = 1MHz, E1 = 0.8V, E2 = 2.2V
1, 2, 3
-55
o
C
≤
T
A
≤
+125
o
C
-
20
mA
HM-65642/883
相關PDF資料
PDF描述
HM1-65642883 8K x 8 Asynchronous CMOS Static RAM
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