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參數(shù)資料
| 型號： | HM-65642883 |
| 廠商： | Intersil Corporation |
| 英文描述： | 8K x 8 Asynchronous CMOS Static RAM |
| 中文描述： | 8K的× 8異步的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 9/9頁 |
| 文件大?。?/td> | 77K |
| 代理商： | HM-65642883 |
6-228
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Die Characteristics
DIE DIMENSIONS:
274.0 x 302.8 x 19
±
1mils
METALLIZATION:
Type: Si - Al
Thickness: 11k
±
2k
GLASSIVATION:
Type: SiO
2
Thickness: 8k
±
1k
WORST CASE CURRENT DENSITY:
0.9 x 10
5
A/cm
2
Metallization Mask Layout
HM-65642/883
A8
A7 A12
VCC
W
E2
A8
A9
A11
G
A10
E1
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
A4
A5
HM-65642/883
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HM1-65642883 | 8K x 8 Asynchronous CMOS Static RAM |
| HM1-65642B883 | 8K x 8 Asynchronous CMOS Static RAM |
| HM1-65642C883 | 8K x 8 Asynchronous CMOS Static RAM |
| HM4-65642883 | 8K x 8 Asynchronous CMOS Static RAM |
| HM4-65642B883 | 8K x 8 Asynchronous CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HM656R0 | 制造商:TT Electronics / BI Technologies 功能描述:HI CURRENT LOW PROFILE SMT INDUCTOR |
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| HM65-6R0LFTR13 | 功能描述:INDUCTOR 6.0UH LOW PROFILE SMD RoHS:是 類別:電感器，線圈，扼流圈 >> 固定式 系列:HM65 標(biāo)準(zhǔn)包裝:500 系列:1331 電感:1.2µH 電流:247mA 電流 - 飽和:247mA 電流 - 溫升:- 類型:鐵芯體 容差:±10% 屏蔽:屏蔽 DC 電阻(DCR):最大 730 毫歐 Q因子@頻率:40 @ 7.9MHz 頻率 - 自諧振:130MHz 材料 - 芯體:鐵 封裝/外殼:0.312" L x 0.115" W x 0.135" H（7.94mm x 2.92mm x 3.43mm） 安裝類型:表面貼裝 包裝:帶卷 (TR) 工作溫度:-55°C ~ 105°C 頻率 - 測試:7.9MHz |
| HM65764 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:HIGH SPEED CMOS SRAM |
| HM65784 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:HIGH SPEED CMOS SRAM |
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