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參數(shù)資料
| 型號(hào)： | HM-65642883 |
| 廠商： | Intersil Corporation |
| 英文描述： | 8K x 8 Asynchronous CMOS Static RAM |
| 中文描述： | 8K的× 8異步的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 77K |
| 代理商： | HM-65642883 |
6-223
Data Hold Time
TWHDX
VCC = 4.5V and
5.5V
9, 10, 11
-55
o
C
≤
T
A
≤
+125
o
C
5
-
5
-
5
-
ns
TE1HDX
VCC = 4.5V and
5.5V
9, 10, 11
-55
o
C
≤
T
A
≤
+125
o
C
10
-
10
-
10
-
ns
TE2LDX
VCC = 4.5V and
5.5V
9, 10, 11
-55
o
C
≤
T
A
≤
+125
o
C
10
-
10
-
10
-
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume transition time
≤
5ns; input levels = 0.0V to 3.0V; timing reference levels = 1.5V; output load = 1TTL equivalent
load and CL
≥
50pF, for CL > 50pF, access times are derated 0.15ns/pF.
TABLE 3. HM-65642/883 ELECTRICAL PERFORMANCE SPECIFICATIONS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
MIN
MAX
UNITS
Output High Voltage
VOH2
VCC = 4.5V, IO = -100
μ
A
1
-55
o
C
≤
T
A
≤
+125
o
C
VCC -0.4
-
V
Input Capacitance
CIN
VCC = Open, f = 1MHz, All
Measurements Refer-
enced to Device Ground
1, 2
T
A
= +25
o
C
-
12
pF
VCC = Open, f = 1MHz, All
Measurements Refer-
enced to Device Ground
1, 3
T
A
= +25
o
C
-
10
pF
I/O Capacitance
CI/O
VCC = Open, f = 1MHz, All
Measurements Refer-
enced to Device Ground
1, 2
T
A
= +25
o
C
-
14
pF
VCC = 4.5V, VI/O = GND
or VCC, All Measurements
Referenced to Device
Ground
1, 3
T
A
= +25
o
C
-
12
pF
Write Enable to Output in High Z
TWLQZ
VCC = 4.5V and 5.5V
1
-55
o
C
≤
T
A
≤
+125
o
C
-
50
ns
Write Enable High to Output ON
TWHQX
VCC = 4.5V and 5.5V
1
-55
o
C
≤
T
A
≤
+125
o
C
5
-
ns
Chip Enable to Output ON
TE1LQX
TE2HQX
VCC = 4.5V and 5.5V
1
-55
o
C
≤
T
A
≤
+125
o
C
10
-
ns
Output Enable to Output ON
TGLQX
VCC = 4.5V and 5.5V
1
-55
o
C
≤
T
A
≤
+125
o
C
5
-
ns
Chip Enable to Output in High Z
TE1HQZ
VCC = 4.5V and 5.5V
1
-55
o
C
≤
T
A
≤
+125
o
C
-
50
ns
TE2LQZ
1
-55
o
C
≤
T
A
≤
+125
o
C
-
60
ns
Output Disable to Output in High Z
TGHQZ
VCC = 4.5V and 5.5V
1
-55
o
C
≤
T
A
≤
+125
o
C
-
50
ns
Output Hold from Address
Change
TAXQX
VCC = 4.5V and 5.5V
1
-55
o
C
≤
T
A
≤
+125
o
C
10
-
ns
NOTES:
1. The parameters listed in Table 3 are controlled via design or process parameters and are not directly tested. These parameters are char-
acterized upon initial design release and upon design changes which would affect these characteristics.
2. Applies to DIP device types only. For design purposes CIN = 6pF typical and CI/O = 7pF typical.
3. Applies to LCC device types only. For design purposes CIN = 4pF typical and CI/O = 5pF typical.
TABLE 2. HM-65642/883 AC ELECTRICAL PERFORMANCE SPECIFICATIONS (Continued)
PARAMETERS
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP A
SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
HM-
65642B/883
HM-
65642/883
HM-
65642C/883
MIN
MAX
MIN
MAX
MIN
MAX
HM-65642/883
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